Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles. Commonly denominated Dirac cones, these dispersion relations are considered to be their essential feature. These materials comprise quite diverse examples, such as graphene and topological insulators. Band-engineering techniques should aim to a full control of the parameter that characterizes the Dirac cones: the Fermi velocity. We propose a general mechanism that enables the fine-tuning of the Fermi velocity in Dirac materials in a readily accessible way for experiments. By embedding the sample in a uniform electric field, the Fermi velocity is substantially modified. We first prove this result analytically, for the surface states of a topological insulator/semiconductor interface, and postulate its universality in other Dirac materials. Then we check its correctness in carbon-based Dirac materials, namely graphene nanoribbons and nanotubes, thus showing the validity of our hypothesis in different Dirac systems by means of continuum, tight-binding and ab-initio calculations.

We propose to Floquet-engineer Dirac cones at the surface of a three-dimensional topological insulator. We show that a large tunability of the Fermi velocity can be achieved as a function of the polarization, direction and amplitude of the driving field. Using this external control, the Dirac cones in the quasienergy spectrum may become elliptic or massive, in accordance to experimental evidences. These results help us to understand the interplay of surface states and external ac driving fields in topological insulators. In our work we use the full Hamiltonian for the three-dimensional system instead of effective surface Hamiltonians, which are usually considered in the literature. Our findings show that the Dirac cones in the quasienergy spectrum remain robust even in the presence of bulk states and, therefore, they validate the usage of effective surface Hamiltonians to explore the properties of Floquet-driven topological boundaries. Furthermore, our model allows us to introduce new out-of-plane field configurations, which cannot be accounted for by effective surface Hamiltonians.

Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly described by a two-band model, predicting the appearance of a Dirac cone in single junctions. We study the quantum-confined Stark effect of interface states due to an electric field perpendicular to a band-inverted junction. We find a closed expression to obtain the interface dispersion relation at any field strength and show that the Dirac cone widens under an applied bias. Thus, the Fermi velocity can be substantially lowered even at moderate fields, paving the way for tunable band-engineered devices based on band-inverted junctions