Two‐dimensional (2D) transition‐metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have recently attracted extensive interest for building future optoelectronic devices. However, the limited light absorption, low photoresponsivity and slow response speed in visible range inhibit their further application. Here, we proposed a promising approach to realize the high‐performance photodetectors (PDs) by constructing 2D‐MoS2 flake/1D‐ZnO nanowire mixed‐dimensional heterostructures. The integration of 1D‐ZnO on p‐type or n‐type MoS2 to form the mixed‐dimensional 2D‐MoS2/1D‐ZnO heterostructure PDs not only broadens the light response range, but also improves the photoresponsivity and response time of 2D‐MoS2 flakes. Under the 365 nm light illumination, the photoresponsivity, external quantum efficiency and response time of p‐MoS2/n‐ZnO PDs are as high as 24.36 A/W, 8.28×103 % and 0.9 s, respectively. Under 532 nm light illumination, the photoresponsivity, external quantum efficiency and response time are estimated to be 0.35 A/W, 80.9 % and 140 ms, respectively. These properties are superior or comparable to the performance of other reported 2D‐MoS2 flake PDs. This work provides a possible strategy for the realization of high‐performance optoelectronic devices by the integration of 2D‐MoS2 and 1D‐ZnO to form mixed‐dimensional heterostructures.
Creating a light emitter to transfer an electrical signal by optical way has a great importance in development of optoelectronics. The silicon nitride films studied by photoluminescence techniques, and determined luminescence is associated with presence of an extended zone of tail states. Defects play the main role in radiative recombination for structures annealed at 600 °C and 1100 °C. Photoluminescence (Pl) intensity of obtained films by plasma enhanced chemical vapor deposition is increased after annealing at 600 °C which are related to increased concentration of defects as a result of broken Si–H and N–H bonds. Due to the formation of N-centers through the breaking of N–H bonds, annealing at 1100 °C led to sharp decrease in the luminescence intensity 5 and 3 times for SiN1.1 and SiN1.5 samples respectively. Replacement of Si-Si bonds by Si-N enhance Eg with increasing stoichiometric parameter, which leads to blue shift edge of photoluminescence maximum. Carbon implantation of silicon nitride films with extra Si obtained by Plasma Enhanced Chemical Vapor deposition at 1x1014 cm‒2, 2x1015 cm‒2, and 1x1016 cm‒2 fluencies, in combination with prolonged annealing at 1100 °C temperature leads to the formation of additional K-centers.
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