An ultra-wide band (UWB) antenna with C-band and X-band notches for wireless communication is presented. The designed structure is printed on a material of "Rogers 4350B" with ε r = 3.66, tan δ = 0.0037, and a thickness of 0.508 mm. This structure is designed to operate at a UWB range starting from 3.3 GHz up to 10.15 GHz with a stopband range from 6.75 GHz to 8.5 GHz. The rejected bands are the upper C-band (6.75 GHz-8 GHz) and the uplink X-band of the satellite (space to earth) from 7.25 GHz to 7.75 GHz. The overall antenna size is optimized, and its dimensions are 21 × 30 × 0.508 mm 3 . The antenna gain varies from 2.1 to 4.2 dBi at the passband, and its total radiation efficiency is 96.4%. The suggested structure is designed and simulated using CSTMWS software. Moreover, a prototype of the proposed structure is fabricated and measured. The fabrication process was done using photolithography techniques, and the measurements were done using an R&S vector network analyzer. Good agreement is achieved between the simulated and measured results.
A wideband compact shark-fin antenna operating in a frequency band from 2.86 GHz to 7.68 GHz is presented. The proposed design is realized on a substrate material of "Rogers 4003C" with ε r = 3.48, tan δ = 0.0027, and substrate thickness 0.81 mm. The antenna is designed to operate at a center frequency of 5 GHz with an operating bandwidth of 4.82 GHz (96.4%). The bandwidth covers the lower band and mid band of 5G at resonant frequencies of 3.5 GHz and 5.8 GHz, respectively. The realized gain of the proposed antenna is 4.1 dBi and 5.35 dBi in the lower band and mid band, respectively. The proposed antenna is designed and simulated. It is also fabricated using photolithography techniques and measured using an R&S vector network analyzer. Good agreement is obtained between the simulated and measured results.
A new sub-THz leaky wave antenna based on grounded silicon substrate for chip to chip communication applications is presented. The proposed leaky wave antenna is based on sinusoidally modulated surface reactance. This surface reactance is implemented by using varying width strips on the top of a grounded silicon substrate. Two approaches for developing these strips are studied. These two approaches are based on either highly doped silicon strips or gold strips. Both the doped silicon and the gold are presented by using their corresponding Drude models at the proposed operating frequency. Comparisons between the properties of these two approaches are presented to show the applicability of each one.
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