Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on an industrial scale. For this reason, thousands of memristor-based applications are reported. Hence, the paper presents an in-depth overview of the philosophical argumentations of memristor, technologies and applications.
The application of memristor in non-linear diffusive network is introduced. A charged-controlled memristor model is used in the quantitative study of pixel-to-pixel communication via a memristor. To quantitatively understand the behaviour of the system, the authors emphasised on two cells: master and slave. Information is launched from the master cell to the slave cell through a memristor and the dynamics, as well as, the saturation of the system is observed.
Many charge controlled models of memristor have been proposed for various applications. First, the original linear dopant drift model suffers discontinuities close to the memristor layer boundaries. Then, the nonlinear dopant drift model improves the memristor behavior near these boundaries but lacks physical meaning and fails for some initial conditions. Finally, we present a new model to correct these defects. We compare these three models in specific situations: (1) when a sine input voltage is applied to the memristor, (2) when a constant voltage is applied to it, and (3) how a memristor transfers charges in a circuit point of view involving resistance-capacitance network. In the later case, we show that our model allows for study of the memristor behavior with phase portraits for any initial conditions and without boundary limitations.
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