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For thermoelectric applications, ab initio methods generally fail to predict the transport properties of the materials because of their inability to predict properly the carrier concentrations that control the electronic properties. In this work, a methodology to fill in this gap is applied on the NiTiSn half Heusler phase. For that, we show that the main defects act as donor of electrons and are responsible of the electronic properties of the material. Indeed, the presence of Nii interstitial defects explains the experimental valence band spectrum and its associated band gap reported in the literature. Moreover, combining the DOS of the solid solutions with the determination of the energy of formation of charged defects, we show that Nii defects are also responsible of the measured carrier concentration in experimentally supposed “pure” NiTiSn compounds. Subsequently the thermoelectric properties of NiTiSn can be calculated using a fully ab initio description and an overall correct agreement with experiments is obtained. This methodology can be extended to predict the result of extrinsic doping and thus to select the most efficient dopant for specific thermoelectric applications.

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Knowing the electronic structure of a material is essential in energy applications to rationalize its performance and propose alternatives. Materials for thermoelectric applications are generally smallgap semiconductors and should have a high figure of merit ZT. Even if the Fe2VAl Heusler compound has a decent ZT, its conductive nature (semimetal or semiconductor) is not yet clarified especially at low temperature. In this paper, we focus our DFT calculations on the effect of temperature on the bandgap of Fe2VAl. In contrast to what is usually observed, we show that both the temperature increase and the formation of thermally-activated Al/V inversion defects (observed experimentally), open the bandgap. Such an unusual behavior is the key for reconciling all bandgap measurements performed on the Fe2VAl compound using a standard GGA functional and could be an efficient way for improving the thermoelectric properties of this family of materials.