It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm(-2) (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or reduction of the local nuclear field by up to 3 Tesla can be generated by varying the intensity of light. The excitation power threshold for such a nuclear spin "switch" is found to depend on both external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of spin transfer from electrons to the nuclei of the dot.The hyperfine interaction in solids [1] arises from the coupling between the magnetic dipole moments of nuclear and electron spins. It produces two dynamical effects: (i) inelastic relaxation of electron spin via the "flip-flop" process ( Fig.1a) and (ii) the Overhauser shift of the electron energy [2]. Recently, the hyperfine interaction in semiconductor quantum dots (QDs) has attracted close attention [3,4,5,6,7,8,9,10,11,12,13,14] fuelled by proposals for QD implementation in quantum information applications [15]. The full quantization of the electron states in QDs is beneficial for removing decoherence mechanisms present in extended systems [16,17]. However, the electron localization results in a stronger (than in a bulk material) overlap of its wave-function with a large number of nuclei (N ∼ 10 4 in small selfassembled InGaAs/GaAs dots and up to 10 5 ÷ 10 6 in electrostatically-defined GaAs QDs), and the resulting hyperfine interaction with nuclear spins has been found to dominate the decoherence [3,4,5,12,13,14] and life-time [9] of the electron spin at low temperatures.In this Letter, we report the observation of a pronounced bistable behaviour of nuclear spin polarisation, S, in optically pumped self-assembled InGaAs/GaAs dots. In our experiments, spin-polarized electrons are introduced one-by-one into an individual InGaAs dot at a rate w x (see Fig.1b) by the circularly polarized optical excitation of electron-hole pairs 120 meV above the lowest QD energy states. Due to hole spin-flip during its energy relaxation, both bright and dark excitons can form in the dot ground state. The former will quickly recombine radiatively with a rate w rec ≈ 10 9 sec −1 , whereas the dark exciton can recombine with simultaneous spin transfer to a nucleus via a spin "flip-flop" process (as in Fig.1a) at the rate w rec N p hf [12,18]. Here N is the number of nuclei interacting with the electron and p hf is the probability of a "flip-flop" process, which from our perturbation theory treatment is given by:(1) Here γ is the exciton life-time broadening, h hf is the strength of the hyperfine interaction of the electron with a single nucleus and E eZ is the electron Zeeman splitting. E eZ is strongly dependent on the effective nuclear magnetic field B N generated by the nuclei. This provides a feedback mechanism between the spin transfer rate and the degree of nuclear polarization (B N ∝ S) in the dot [19]. Th...

Abstract-Repeated pulsed electrical stimulation is used in a multitude of neural interfaces; damage resulting from such stimulation was studied as a function of pulse duration, electrode size, and number of pulses using a fluorescent assay on chick chorioallontoic membrane (CAM) in vivo and chick retina in vitro. Data from the chick model were verified by repeating some measurements on porcine retina in-vitro. The electrode size varied from 100 m to 1 mm, pulse duration from 6 s to 6 ms, and the number of pulses from 1 to 7500. The threshold current density for damage was independent of electrode size for diameters greater than 300 m, and scaled as 1 2 for electrodes smaller than 200 m. Damage threshold decreased with the number of pulses, dropping by a factor of 14 on the CAM and 7 on the retina as the number of pulses increased from 1 to 50, and remained constant for a higher numbers of pulses. The damage threshold current density on large electrodes scaled with pulse duration as approximately 1 0 5 , characteristic of electroporation. The threshold current density for repeated exposure on the retina varied between 0.061 A/cm 2 at 6 ms to 1.3 A/cm 2 at 6 s. The highest ratio of the damage threshold to the stimulation threshold in retinal ganglion cells occurred at pulse durations near chronaxie-around 1.3 ms.

This work reports on investigations of parameters of ion streams emitted from a plasma produced with a picosecond laser at the power densities ≥1016 W/cm2. Not many papers dealing with such investigations have been published up to now, in spite of the fact that the application of precise corpuscular diagnostics enables better learning of the physical properties of such a plasma. As a result of the investigations carried out, the average and maximum energies of Cu ions were 30 keV and 150 keV, respectively. The maximum charge of Cu ions was 13+. The dependencies of parameters of ions emitted from the plasma on the laser-pulse energy as well as on the location of the focus of the laser beam with respect to the target's surface were also found out. The results obtained from the ion measurements in relation to the results of measurements of X ray are discussed.

It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight.We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm 2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a gogglemounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning.A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays.Possibility of the tactile neural stimulation is also examined.

Electrosurgery, one of the most-often used surgical tools, is a robust but somewhat crude technology that has changed surprisingly little since its invention almost a century ago. Continuous radiofrequency is still used for tissue cutting, with thermal damage extending to hundreds of micrometers. In contrast, lasers developed 70 years later, have been constantly perfected, and the laser-tissue interactions explored in great detail, which has allowed tissue ablation with cellular precision in many laser applications. We discuss mechanisms of tissue damage by electric field, and demonstrate that electrosurgery with properly optimized waveforms and microelectrodes can rival many advanced lasers. Pulsed electric waveforms with burst durations ranging from 10 to 100 micros applied via insulated planar electrodes with 12 microm wide exposed edges produced plasma-mediated dissection of tissues with the collateral damage zone ranging from 2 to 10 microm. Length of the electrodes can vary from micrometers to centimeters and all types of soft tissues-from membranes to cartilage and skin could be dissected in liquid medium and in a dry field. This technology may allow for major improvements in outcomes of the current surgical procedures and development of much more refined surgical techniques.

Retinal neurons migrate within a few days into perforations (> 5 microm in diameter) of a membrane placed into the subretinal space. This may provide a means of gaining close proximity between electrodes in a retinal prosthetic chip and target cells, and thus allow a greater density of stimulating elements to subserve higher resolution. Further studies are needed to explore the long-term stability of the retinal migration.

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ≈ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.