Ge:SiO(x)/SiO(2) multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge-Si-O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge-Si-O reveals complete Ge-O phase separation at 400 °C which does not differ significantly to the binary Ge-O system. Ge nanocrystals of < 5 nm size are generated after subsequent annealing below 700 °C. It is shown that Ge oxides contained in the as-deposited multilayers are reduced by a surrounding unsaturated silica matrix. A stoichiometric regime was found where almost no GeO(2) is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.
A new position sensitive detector with a global energy resolution for the entire detector of about 380 eV FWHM for 8.04 keV line at ambient temperature is presented. The measured global energy resolution is defined by the energy spectra summed over all strips of the detector, and thus it includes electronic noise of the front-end electronics, charge sharing effects, matching of parameters across the channels and other system noise sources. The target energy resolution has been achieved by segmentation of the strips to reduce their capacitance and by careful optimization of the front-end electronics. The key design aspects and parameters of the detector are discussed briefly in the paper. Excellent noise and matching performance of the readout ASIC and negligible system noise allow us to operate the detector with a discrimination threshold as low as 1 keV and to measure fluorescence radiation lines of light elements, down to Al Kα of 1.49 keV, simultaneously with measurements of the diffraction patterns. The measurement results that demonstrate the spectrometric and count rate performance of the developed detector are presented and discussed in the paper.
Temperature induced changes of the local chemical structure of bulk amorphous GexSiOy are studied by Ge K-edge x-ray absorption near-edge spectroscopy and Si L2/3-edge x-ray Raman scattering spectroscopy. Different processes are revealed which lead to formation of Ge regions embedded in a Si oxide matrix due to different initial structures of as-prepared samples, depending on their Ge/Si/O ratio and temperature treatment, eventually resulting in the occurrence of nanocrystals. Here, disproportionation of GeOx and SiOx regions and/or reduction of Ge oxides by pure Si or by a surrounding Si sub-oxide matrix can be employed to tune the size of Ge nanocrystals along with the chemical composition of the embedding matrix. This is important for the optimization of the electronic and luminescent properties of the material.
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