Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400 K.

There is much interest in scaling rf-excited capacitively coupled plasma reactors to larger sizes and to higher frequencies. As the size approaches operating wavelength, concerns arise about non-uniformity across the work piece, particularly in light of the well-documented slow-surface-wave phenomenon. We present measurements and calculations of spatial and frequency dependence of rf magnetic fields inside argon plasma in an industrially relevant, 300 mm plasma-processing chamber. The results show distinct differences in the spatial distributions and harmonic content of rf fields in the plasma at the three frequencies studied (13.56, 60 and 176 MHz). Evidence of a slow-wave structure was not apparent. The results suggest that interaction between the plasma and the rf excitation circuit may strongly influence the structures of these magnetic fields and that this interaction is frequency dependent. At the higher frequencies, wave propagation becomes extremely complex; it is controlled by the strong electrical nonlinearity of the sheath and is not explained simply by previous models.

The mechanism for atomic layer etching (ALE) typically consists of two sequential self-limited half-reactions-passivation and ion bombardment-which provide unique control over the process. Some of the possible benefits of this control include increased selectivity, reduced plasma induced damage, improved uniformity and aspect ratio independence. To achieve the greatest benefit from ALE, both half-reactions should be fully self-limited. In the experimental demonstration of ALE of SiO 2 using fluorocarbon plasmas, the passivation phase typically consists of deposition of fluoropolymer on the SiO 2 surface. This passivation step is not a self-limited reaction as the final polymer thickness depends on the passivation time. In this paper, results are presented from a computational investigation of the ALE of SiO 2 and Si 3 N 4 focusing on the implications of this nonself-limited passivation phase. The polymer overlayer was found to be critically important to the ALE performance, providing the main mechanism for selectivity between SiO 2 and Si 3 N 4. The polymer overlayer acts as a fuel for etching SiO 2 , which couples the etch depth per ALE cycle to the passivation time. Due to the inherently pulsed nature of the ALE mechanism, the polymer overlayer requires a finite number of cycles to reach a pulsed periodic steady-state thickness. Since the thickness of the polymer overlayer largely determines selectivity between SiO 2 and Si 3 N 4 , the initial formation of an overlayer results in a transient period at the beginning of etching where high selectivity may not be achieved. For the etching of thin films, or applications which require very high selectivity, this transient etching period may be a limiting factor. Results are also presented using ALE to etch high aspect ratio self-aligned contacts which could not be cleared using continuous plasma etching with similar ion energies and flux ratios.

Current (and future) microelectronics fabrication requirements place unprecedented demands on the fidelity of plasma etching. As device features shrink to atomic dimensions, the plasma etching processes used to define these devices must resolve these scales. By separating etching processes into cycles of multiple, self-limited steps, different physics processes which are closely coupled in traditional plasma etching can be largely decoupled and separately optimized. This technique, atomic layer etching (ALE), can ideally remove uniform layers of material with consistent thickness in each cycle. ALE holds the promise of improving uniformity, reducing damage, increasing selectivity, and minimizing aspect ratio dependent etching (ARDE) rates. The practical implementation of ALE depends on how close to ideal the system can be operated and the tolerance to nonideal conditions. In this paper, results are discussed from a computational investigation of the consequences of nonidealities in the ALE of silicon using Ar/Cl 2 plasmas for both two dimensional trenches and three dimensional features. The authors found that ideal ALE requires self-limited processes during all steps of the ALE cycle. Steps that include continuous (non-self-limited) etching reactions reduce the ability of ALE to decouple process parameters. In addition to an etch depth that depends on pulse length per cycle, non-self-limited processes can reintroduce ARDE and produce surface roughening. By controlling subcycle pulse times, these deleterious effects can be minimized, and many of the benefits of ALE can be restored. Even nonideal ALE processes, when properly optimized, still provide benefits over continuous etching with similar chemistries and ion energy distributions. Using fluxes generated by a conventional inductively coupled plasma reactor, an example ALE process is able to clear the corners in a three-dimensional fin based field effect transistor case study with significantly less over-etch than the continuous process.

Anisotropic etching, enabled by energetic ion bombardment, is one of the primary roles of plasma-assisted materials processing for microelectronics fabrication. One challenge in plasma etching is being able to control the ion energy-angular distributions (IEADs) from the presheath to the surface of the wafer which is necessary for maintaining the critical dimension of features. Dual frequency capacitive coupled plasmas (DF-CCPs) potentially provide flexible control of IEADs, providing high selectivity while etching different materials and improved uniformity across the wafer. In this paper, the authors present a computational investigation of customizing and controlling IEADs in a DF-CCP resembling those industrially employed with both biases applied to the substrate holding the wafer. The authors found that the ratio of the low-frequency to high-frequency power can be used to control the plasma density, provide extra control for the angular width and energy of the IEADs, and to optimize etch profiles. If the phases between the low frequency and its higher harmonics are changed, the sheath dynamics are modulated, which in turn produces modulation in the ion energy distribution. With these trends, continuously varying the phases between the dual-frequencies can smooth the high frequency modulation in the time averaged IEADs. For validation, results from the simulation are compared with Langmuir probe measurements of ion saturation current densities in a DF-CCP.