Focused ion beam ͑FIB͒ methodologies for successfully milling copper ͑U.S. Patent No. 6,322,672 B1͒ have been demonstrated. Approaches to milling copper ͑Cu͒ are required because standard FIB mill procedures produce rough, uneven cuts that are unsuitable for circuit edits, a principal FIB function. Efforts to develop gas assisted etching ͑GAE͒ processes which would smoothly mill Cu failed because Cu halides are not volatile and remain on the substrate as corrosive electrically conductive debris. Single crystal studies show that Cu grains with different crystal orientations vary in mill rate by as much as 4ϫ. Moreover, the ͑110͒ crystal orientation, which mills most slowly, forms a Cu 3 Ga phase when milled with a focused Ga ion beam. This phase is particularly resistant to milling and, in polycrystalline Cu, propagates during the milling operation, contributing to the uneven trench profiles. CoppeRx, a novel scan strategy, cleanly and uniformly removes polycrystalline Cu with minimal damage to the underlying dielectric. CoppeRx minimizes the formation and propagation of the Cu 3 Ga phase and equalizes the etch rates of the Cu crystal orientations. The CoppeRx strategy includes the milling of an ''egg crate'' topography to minimize the propagation of the Cu 3 Ga phase and the creation of a heavy atom sacrificial layer of the Cu surface ͑U.S. Patent Application No. 20010053605͒ which scatters the incident Ga ion beam, thereby reducing the channeling influence on Cu milling rates. This heavy atom layer is created by flowing W͑CO͒ 6 vapor during the FIB milling process. The CoppeRx scan strategy is especially beneficial for milling thick ͑Ͼ0.8 m͒ Cu structures with large, prominent grains. Because Cu interconnect lines are relatively thin ͑Ͻ0.4 -0.5 m͒, grain-related milling roughness is less of a problem. The CoppeRx egg crate topography and W scattering layer are not required. Instead, the successful cutting of 40 ohm Cu interconnect lines to produce Ͼ20 M ohm open circuits is achieved by flowing O 2 or H 2 O during the milling process ͑U.S. Patent No. 6,322,672B1͒. The O 2 /H 2 O flow smoothes the Cu milling by producing an amorphous surface oxide, thereby reducing channeling, and by enhancing the etch selectivity for Cu relative to the surrounding and underlying SiO 2 based dielectric. These interconnect cuts have been routinely done at the bottom of high aspect ratio holes ͑e.g., 1ϫ1ϫ9 m͒.
Articles you may be interested inCharacterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias J. Vac. Sci. Technol. B 29, 011026 (2011); 10.1116/1.3539204 Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition Low resistance metal deposition in deep submicron vias is required for circuit rewiring in focused ion beam ͑FIB͒-based integrated circuit modification. Voids in high aspect ratio deposition, associated with the application of traditional FIB process to tungsten deposition in vias with aspect ratios beyond 10:1 contribute substantially to the resistance of the via. Pinch off of the via aperture is frequently observed. The dynamics of tungsten deposition within vias was studied through a series of via cross sections with variable deposition dose, and revealed accelerated deposition growth on the walls at the top of the vias. Accelerated deposition on the sidewalls, where the primary beam interacts with the substrate at a glancing angle, suggested that the deposition growth is initiated by secondary charged particles generated at the point of primary beam impact rather than by the primary beam itself. The results are in agreement with mechanisms previously proposed and confirmed by experiments. In order to prevent the generation of secondary particles on the walls of the via, and the consequent pinch off closure of the via aperture, confining the primary beam to an area much smaller than the aperture of the via was attempted. With this process, secondary particles are generated at the bottom of the via and trapped within the via, which was expected to lead to bottom-up deposition growth. A dose series study of the deposition produced by the proposed process confirmed the uniform growth of the tungsten fill from the bottom of the via. Void-free depositions were made in 5 m deep vias ranging in size from 0.5 m by 0.5 m to 0.2 m by 0.2 m, corresponding to aspect ratios from 10:1 to 25:1, respectively.
Advances in FIB (focused ion beam) chemical processes and in the Ga (gallium) beam profile are discussed; these advances are necessary for the successful failure analysis, circuit edit and design verification of advanced, sub-0.13µm Cu devices. Included in this article are: a novel FIB method (CopperRx) for smoothly milling thick, large grained Cu lines; H2O and O2 processes for cleanly cutting thin, smaller grained Cu lines, thereby forming electrically open interconnects; a XeF2 GAE (gas assisted etching) process for etching low k, CVD dielectrics such as F and C doped SiO2; H2O and XeF2 GAE processes for etching low k, spin-on, organic dielectrics such as SiLK; a recently developed recipe for the deposition of SiO2 based material with intermediate resistivity (106 µohm·cm) which is useful in the design verification of frequency sensitive, high speed analog and SOC (system on chip) circuits; an improved, more Gaussian Ga beam with less current density in the beam tails (VisION column) which provides higher resolution, real time images needed for end-point detection on sub 0.13µm features during milling.
Secondary electron signal is widely used in Focused Ion Beam (FIB) systems for imaging and endpointing. In the application of integrated circuit modification, technology has progressed towards smaller dimensions and higher aspect ratios. Therefore, FIB based circuit modification processes require the use of primary ion beam currents below 10 pA and Gas Assisted Etching (GAE). At low beam currents, short pixel dwell times and high aspect ratios, the level of available secondary electrons for detection has declined significantly. FIB GAE and deposition requires delivery and release of a gaseous agent near the beam scanning area, and involves insertion of a gas delivery nozzle made of conductive material and grounded for charge prevention purposes. The proximity of a grounded gas delivery nozzle to the area being milled and/or imaged creates a “shielding” effect, further lowering secondary electron signal level. The application of a small positive bias to the gas delivery nozzle provides an effective way of reducing the “shielding” effect. Depending on the geometrical arrangement of the gas delivery system and other conductive objects in the chamber, an optimized nozzle bias potential can create conditions favorable for enhanced extraction and collection of secondary electrons. The level of the secondary electron image signal, collected in an FEI Vectra 986+ system, from a grounded copper sample with the nozzle extended and biased can be enhanced as much as six times as compared to the grounded nozzle. Secondary electron intensity endpoint is improved on backside samples, however shielding of the nozzle field by the bulk silicon substrate limits the electron extraction effect from within a via. For front side edits the improvement of endpoint signal level can be dramatic. Lateral image offset induced by the electrostatic field of a biased nozzle, can be removed by software position compensation.
Competitive circuit analysis of Integrated Circuits (ICs) is one of the most challenging types of analysis. It involves multiple complex IC die de-processing/de-layering steps while keeping precise planarity from metal layer to metal layer. Each step is followed by Scanning Electron Microscope (SEM) imaging together with mosaicking that subsequently passes through an image recognition and Graphic Database System (GDS) conversion process. This conventional procedure is quite time and resource consuming. The current paper discusses and demonstrates a new inventive methodology of circuit tracing on an IC using known FIB Passive Voltage Contrast (PVC) effects [1]. This technique provides significant savings in time and resources.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.