A method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as-received Si(100) wafer in an ultrahigh vacuum molecular-beam epitaxy system. The substrate is then heated to ∼800 °C for about 5 min, the SiO2 is removed to leave behind a Sr- or SrO-terminated ordered Si(100) surface. This Sr- or SrO-terminated Si(100) surface is well suited for the growth of crystalline high-k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle were mainly SiO and O, no significant amount of Sr containing species was observed. We conclude that the SiO2 removal is due to the catalytic reaction SiO2+Sr(or SrO)→SiO(g)+O+Sr(or SrO). The reaction SiO2+Si→2SiO(g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and passivating the newly exposed Si surface, preventing further etching and the formation of pits in the substrate.

In March 2012, a group of researchers met to discuss emerging topics in ceramic science and to identify grand challenges in the field. By the end of the workshop, the group reached a consensus on eight challenges for the future:—understanding rare events in ceramic microstructures, understanding the phase‐like behavior of interfaces, predicting and controlling heterogeneous microstructures with unprecedented functionalities, controlling the properties of oxide electronics, understanding defects in the vicinity of interfaces, controlling ceramics far from equilibrium, accelerating the development of new ceramic materials, and harnessing order within disorder in glasses. This paper reports the outcomes of the workshop and provides descriptions of these challenges.

In recent years, research on Ge nanodevices has experienced a renaissance, as Ge is being considered a possible high mobility channel material replacement for Si MOSFET devices. However, for reliable high performance devices, an atomically flat and perfectly clean Ge surface is of utmost importance. In this review, the existing methods for cleaning the Ge(001) surface are reviewed and compared for the first time. The review discusses three broad categories of cleaning techniques that have been successfully demonstrated to obtain a clean Ge surface. First, the use of ultraviolet light and/or oxygen plasma is discussed. Both techniques remove carbon contamination from the Ge surface and simultaneously form an oxide passivation layer. Second, in situ ion sputtering in combination with germanium regrowth, which can lead to extremely clean and well-ordered Ge surfaces, is discussed. Finally, various wet-etching recipes are summarized, with focus on hydrofluoric acid (HF), NH4OH, and HCl. Despite the success of HF for Si surface preparation, it is demonstrated that in the case of Ge, HF is outperformed by other chemicals with respect to surface roughness, carbon and oxide removal efficiency. It is shown that several cleaning methods can lead to a perfectly clean Ge surface, but only a few methods can be considered for actual device integration due to their effectiveness, simplicity, and scaling ability.

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