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We report on the design and characterization of single-chip electron spin resonance (ESR) detectors operating at 50GHz, 92GHz, and 146GHz. The core of the single-chip ESR detectors is an integrated LC-oscillator, formed by a single turn aluminum planar coil, a metal-oxide-metal capacitor, and two metal-oxide semiconductor field effect transistors used as negative resistance network. On the same chip, a second, nominally identical, LC-oscillator together with a mixer and an output buffer are also integrated. Thanks to the slightly asymmetric capacitance of the mixer inputs, a signal at a few hundreds of MHz is obtained at the output of the mixer. The mixer is used for frequency down-conversion, with the aim to obtain an output signal at a frequency easily manageable off-chip. The coil diameters are 120μm, 70μm, and 45μm for the U-band, W-band, and the D-band oscillators, respectively. The experimental frequency noises at 100kHz offset from the carrier are 90Hz/Hz, 300Hz/Hz, and 700Hz/Hz at 300K, respectively. The ESR spectra are obtained by measuring the frequency variations of the single-chip oscillators as a function of the applied magnetic field. The experimental spin sensitivities, as measured with a sample of α,γ-bisdiphenylene-β-phenylallyl (BDPA)/benzene complex, are 1×10spins/Hz, 4×10spins/Hz, 2×10spins/Hz at 300K, respectively. We also show the possibility to perform experiments up to 360GHz by means of the higher harmonics in the microwave field produced by the integrated single-chip LC-oscillators.

A high sensitivity field asymmetric ion mobility spectrometer (FAIMS) was designed, fabricated, and tested. The main components of the system are a 10.6 eV UV photoionization source, an ion filter driven by a high voltage/high frequency n-MOS inverter circuit, and a low noise ion detector. The ion filter electronics are capable to generate square waveforms with peak-to-peak voltages up to 1000 V at frequencies up to 1 MHz with adjustable duty cycles. The ion detector current amplifier has a gain up to 10 V/A with an effective equivalent input noise level down to about 1 fA/Hz during operation with the ion filter at the maximum voltage and frequency. The FAIMS system was characterized by detecting different standard chemical compounds. Additionally, we investigated the use of a synchronous modulation/demodulation technique to improve the signal-to-noise ratio in FAIMS measurements. In particular, we implemented the modulation of the compensation voltage with the synchronous demodulation of the ion current. The analysis of the measurements at low concentration levels led to an extrapolated limit of detection for acetone of 10 ppt with an averaging time of 1 s.

Integration of the sensitivity-relevant electronics of nuclear magnetic resonance (NMR) and electron spin resonance (ESR) spectrometers on a single chip is a promising approach to improve the limit of detection, especially for samples in the nanoliter and subnanoliter range. Here, we demonstrate the cointegration on a single silicon chip of the front-end electronics of NMR and ESR detectors. The excitation/detection planar spiral microcoils of the NMR and ESR detectors are concentric and interrogate the same sample volume. This combination of sensors allows one to perform dynamic nuclear polarization (DNP) experiments using a single-chip-integrated microsystem having an area of about 2 mm2. In particular, we report 1H DNP-enhanced NMR experiments on liquid samples having a volume of about 1 nL performed at 10.7 GHz­(ESR)/16 MHz­(NMR). NMR enhancements as large as 50 are achieved on TEMPOL/H2O solutions at room temperature. The use of state-of-the-art submicrometer integrated circuit technologies should allow the future extension of the single-chip DNP microsystem approach proposed here up the THz­(ESR)/GHz­(NMR) region, corresponding to the strongest static magnetic fields currently available. Particularly interesting is the possibility to create arrays of such sensors for parallel DNP-enhanced NMR spectroscopy of nanoliter and subnanoliter samples.

High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V heterostructures have superior mobility compared with the transistors of silicon-based complementary metal-oxide-semiconductor technologies. The large mobility makes them attractive not only for low-noise and high-power microwave applications but also for low-power applications down to deep cryogenic temperatures. Here, we report on the design and characterization of a low-power HEMT LC Colpitts oscillator operating at 11 GHz whose minimum power consumption is 90 µW at 300 K and 4 µW at 1.4 K. The fully integrated oscillator is based on a single HEMT transistor having a gate length of 70 nm and realized using a 2DEG in In 0.7 Ga 0.3 As. The power consumption of the realized oscillator is the lowest reported in the literature so far for an LC oscillator operating in the same frequency range. In order to investigate the behavior of the oscillator, we also performed a detailed characterization of a stand-alone HEMT transistor from 1.4 to 300 K with a static magnetic field from 0 to 8 T. From the extracted values of the transistor parameters, we estimate and compare the minimum power necessary to start-up oscillations for two different Colpitts topologies.

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We report on four electron paramagnetic resonance sensors for dynamic magnetic field measurements at 36 mT, 100 mT, 360 mT, and 710 mT. The sensors are based on grounded co-planar microwave resonators operating at about 1 GHz and 3 GHz, realized using printed circuit board technology, and on single-chip integrated microwave oscillators operating at about 10 GHz and 20 GHz, realized using complementary metal-oxide-semiconductor technology. The sensors are designed to mark precisely the moment when a time-dependent magnetic field attains a specific value. The trigger from the sensor can be used to preset the output of real-time magnetic field measurement systems, called “B-trains,” which are in operation at several large synchrotron installations, including five of the CERN’s particle accelerators. We discuss in detail the performance achieved, in particular, the magnetic field resolution that is in the range of 0.1 nT/Hz1/2–6 nT/Hz1/2. The effects of material anisotropy and temperature are also discussed. Finally, we present a detailed characterization of the sensors with field ramps as fast as 5 T/s and field gradients as strong as 12 T/m.

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