The wafer-scale synthesis of layered transitional metal
dichalcogenides
presenting good crystal quality and homogeneous coverage is a challenge
for the development of next-generation electronic devices. This work
explores a fairly unconventional growth method based on a two-step
process consisting in sputter deposition of stochiometric MoS2 on Si/SiO2 substrates followed by nanosecond UV
(248 nm) pulsed laser annealing. Large-scale 2H-MoS2 multi-layer
films were successfully synthetized in a N2-rich atmosphere
thanks to a fine-tuning of the laser annealing parameters by varying
the number of laser pulses and their energy density. The identification
of the optimal process led to the success in achieving a (002)-oriented
nanocrystalline MoS2 film without performing post-sulfurization.
It is noteworthy that the spatial and temporal confinement of laser
annealing keeps the Si/SiO2 substrate temperature well
below the back-end-of-line temperature limit of Si CMOS technology
(770 K). The synthesis method described here can speed up the integration
of large-area 2D materials with Si-based devices, paving the way for
many important applications.
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