The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley−Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric.

Understanding materials with dimensions down to few nanometers is of major importance for fundamental science as well as prospective applications. Structural transformation and phononconfinement effects in the nanodiamonds (NDs) have been theoretically predicted below 3 nm size. Here we investigate the effect of size on the surface chemistry, microscopic structure, and Raman scattering of high-pressure high-temperature (HPHT) and detonation nanodiamonds (DNDs) down to 2-3 nm. The surface and size of NDs are controlled by annealing in air and ultracentrifugation resulting in three ND fractions. Particle size distribution (PSD) of the fractions is analyzed by combining dynamic light scattering (DLS), analytical ultracentrifugation (AUC), small angle X-ray scattering (SAXS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) as complementary techniques. Based on the obtained PSD we identify size-dependent and synthesis-dependent differences of NDs properties. In particular, interpretation of Raman scattering on NDs is revisited. Comprehensive comparison of detonation 3 and pure monocrystalline HPHT NDs reveals effects of diamond core size and defects, chemical and temperature (in)stability as well as limitations of current phonon confinement models. In addition, low-frequency Raman scattering in the 20 -200 cm -1 range is experimentally observed.The size dependence of this signal for both HPHT NDs and DNDs suggests that it may correspond to confined acoustic vibrational, "breathing-like" modes of NDs.

Metal-halide perovskites feature very low deep-defect densities, enabling thereby high operating voltages on solar cell level. Here, by precise extraction of their absorption spectra, we find that the low deep-defect density is unaffected when Cs + and Rb + are added during the perovskite synthesis. By comparing single-crystals and polycrystalline thin-films of methyl ammonium lead iodide/bromide, we find these defects to be predominantly localized at surfaces and grain boundaries. Furthermore, for the most important photovoltaic materials, we demonstrate a strong correlation between their Urbach energy and open-circuit voltage deficiency on the solar cell level. Via external quantum yield photoluminescence efficiency measurements, we explain these results as a consequence of non-radiative open-circuit voltage losses in the solar cell.Finally, we define practical power conversion efficiency limits of solar cells by taking into account the Urbach energy.

Lead-halide perovskites have established a firm foothold in photovoltaics and optoelectronics due to their steadily increasing power conversion efficiencies approaching conventional inorganic single-crystal semiconductors. However, further performance improvement requires reducing defect-assisted, nonradiative recombination of charge carriers in the perovskite layers. A deeper understanding of perovskite formation and associated process control is a prerequisite for effective defect reduction.In this study, we analyze the crystallization kinetics of the lead-halide perovskite MAPbI 3−x Cl x during thermal annealing, employing in situ photoluminescence (PL) spectroscopy complemented by lab-based grazing-incidence wide-angle X-ray scattering (GIWAXS). In situ GIWAXS measurements are used to quantify the transition from a crystalline precursor to the perovskite structure. We show that the nonmonotonous character of PL intensity development reflects the perovskite phase volume, as well as the occurrence of the defects states at the perovskite layer surface and grain boundaries. The combined characterization approach enables easy determination of defect kinetics during perovskite formation in real-time.