The photoaddressed spatial light modulator (PLSM) with thin hydrogenated amorphous silicon carbide photoreceptor a-Sil.xCx:H and nematic liquid crystal has been fabricated. The films were prepared by rf plasma decomposition of SiH4 and CH4 gas mixture. They have a high dark resistivity and photosensitivity as a hydrogenated amorphous silicon, but a more transmittance in visible spectrum. The maximum of diffraction efficiency for PLSM was achieved for the write light intensity 40 pWlcm2, a resolution on the one half of maximum of diffraction efliciency was 54 mm-1. The optical response of PLSM was observed in the frequency region from 1 Hz to 100 Hz.
The results are reported of theoretical and experimental studies of the dependence of diffraction efficiency of hologramcorrector upon an orientation of a diffraction grating vector and of the polarization of the reading-out radiation with respect to the normal to the smectic layers. The gratings recorded using DHF-effect and Clark-Lagerwall effect were studied. The conditions were determined when the dependence of diffraction efficiency vs. radiation polarization is weak. It was found out that in the hologram-corrector, using the polymer photoconductor, the diffraction efficiency is significantly dependent of the vector ofgrating orientation, while for the hologram-correctors using a-Si:C:H photoconductor this dependence is practically absent.
The liquid-crystal light valve (LCLV) is a useful component for performing integration, thresholding, and gain functions in optical neural networks. Integration of the neural activation channels is implemented by pixelation of the LCLV, with use of a structured metallic layer between the photoconductor and the liquid-crystal layer. Measurements are presented for this type of valve, examples of which were prepared for two specific neural network implementations. The valve fabrication and measurement were carried out at the State Optical Institute, St. Petersburg, Russia, and the modeling and system applications were investigated at the Institute of Microtechnology, Neuchâtel, Switzerland.
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