We studied a method of low temperature Cu-Cu quasi-direct bonding inserting ultra-thin metal layer deposited by atomic layer deposition ALD. A thin Pt layer was selected as a metal intermediate layer because Pt can be easily diffused into Cu. Area selective deposition of Pt on Cu surface was achieved without any mask using ALD. The Cu-Cu bonding using an ultra-thin Pt interlayer realized enough shear strength of 9.5 MPa, which was 5.1 times larger than without using the Pt interlayer. The Pt intermediate layer promoted atomic diffusion on the bonding interface at 300 , which can improve the shear strength of the Cu-Cu bonding. The proposed method is a useful for low-temperature mounting, which is an issue for 2.5D/ 3D mounting.
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