In this work, the impact of the substrate annealing temperature on the thickness and roughness of La 2 Ti 2 O 7 thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited La 2 Ti 2 O 7 thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly; the maximum thickness was found (231 nm) when LTO thin film deposited at 500˚C. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500˚C). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films.
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