In this paper, we study double cascade dressed optical metal oxide semiconductor field-effect transistor (MOSFET) by exploiting enhancement and suppression for mixed-phase (hexagonal + tetragonal) of Eu 3+ :YPO 4 and different phases (hexagonal + tetragonal and pure tetragonal) of Pr 3+ :YPO 4 crystals. We report variation of fine structure energy levels in different doped ions (Eu 3+ and Pr 3+ ) in the host YPO crystal. We compared multi-level energy transition from a single dressing laser with single level energy transition from double cascade dressing lasers. Gate delay facilitates multi-energy level dressed transition and is modeled through a Hamiltonian. Based on the results of double cascade dressing, we have realized MOSFET for logic gates (inverter and logic not and gate) with a switching contrast of about 92% using a mixed phase of Pr 3+ :YPO 4 .
The determination of classical and quantum states through photon bunching and anti-bunching like phenomena may have potential applications in quantum information processing and long-distance quantum communications. We report the photon bunching and multi anti-bunching like phenomena by generating multi-order fluorescence and four-wave mixing (FWM) at room temperature using the Nitrogen-vacancy (NV) center in diamond. We have implied FWM process to demonstrate the interference pattern emerging from NV of nano-crystals in classical, nonclassical and intermediate (classical and nonclassical) regimes. Intersystem crossing is controlled by the fluence of incident beams. The interference pattern from dominant ionization of NV- to NVo and NVo to NV- suggests the bunching and anti-bunching like phenomena of photons, respectively.
Here we report on the damped cross-Rabi oscillations in the intensity noise correlation resulting from the destructive interference between two four-wave mixing (FWM) processes, controlled by dressing atomic coherence in a nitrogen-vacancy center in a diamond. Also, the relationship between the self-Rabi oscillation of temporal intensity and cross-Rabi oscillation is investigated at a low temperature. Additionally, we discuss the notion that cross-Rabi oscillation in correlated beams can be switched between FWM and second-order fluorescence.
Rare earth doped crystal Pr 3+ :Y 2 SiO 5 has unique features, whose nonlinear response is dynamically triggered and modulated by the interaction between dressing and phonon effect. In this article, we have demonstrated the switching from two-mode bunching to anti-bunching like phenomenon of noise intensity fluctuations used for noise correlation. Here, switching in bunching phenomenon is caused by relative nonlinear phase, which is induced by self-and cross-phase modulation. In contrast with two-mode bunching, three-mode bunching case hardly follows the switching mechanism attributed to the destructive interaction among the phases of Stokes, anti-Stokes and FL signals. We also have realized switching and routing application in two and three mode bunching. Both functions (switching and routing) are controlled by manipulating temperature of cryostat and gate delay. Our experimental results provide the novel technique for switching and channel equalization ratio of about 96%. The intensity switching speed is achieved about 17 ns.
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