The silicon wafer temperature change during flash lamp annealing is theoretically evaluated. A calculation model is developed on the basis of a finite difference method taking into account various heat transport phenomena, such as heat radiation from a lamp to a silicon surface, reflection at the silicon surface, heat radiation from a hot silicon surface, light absorption in silicon, and thermal conduction. The effect of the light absorption in a silicon wafer on the temperature profile is negligible at the position of ultrashallow junction formation. The largest temperature slope is shown to be formed by flash lamp annealing because of the agreement of the temperature slope obtained by taking into account heat absorption in silicon with that obtained by assuming heat absorption only at the surface, without accounting for the light absorption in silicon. This study further concludes that the surface reflectivity strongly affects the silicon temperature.
The temperature gradient formed in a silicon-on-insulator (SOI) wafer during a flash lamp annealing process is calculated on the basis of the heat transport theory. The temperature of SOI wafer, having a 0.04-mm-thick active layer and a 0.1-mm-thick buried oxide (BOX) layer, is calculated. Within 1000 ms, the active layer surface reaches the maximum temperature higher than 1473 K. Because most of the heat is transported by conduction, a very large temperature gradient, such as 3 Â 10 7 K/m, is formed in the BOX layer owing to its very small heat conductivity. The radiant heat flux through the BOX layer is estimated to be significantly smaller than the conduction heat flux. From a series of calculations taking into account various thicknesses of the active layer and the BOX layer, a BOX layer thicker than 1 mm can significantly increase the active layer temperature.
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