+1 650 868 9947) Len.Tedeschi@usa.sokudospeed.com
ABSTRACTDemand for Immersion topcoat-less resist processes is being driven by the desire to reduce the cost per wafer pass. Two key characteristics, required by high speed immersion scanners, of topcoat-less resist are high receding contact angle and low leaching rates. The extremely hydrophobic surface required by the scanner provides significant challenges to the remaining processing steps, especially (developer) process related defects: pattern collapse and hydrophobic residuals. Recent developments in materials and processing techniques have led to very promising results. In this paper the following will be presented:• Defectivity results on 45nm L/S of several topcoat-less resists, including the effects of optimized track rinse recipes. • Results of a fundamental study on static contact angles changes of different topcoat-less resists after each track process step to identify where in the process issues originate.• Imaging and defectivity results of 38nm L/S using the topcoat-less champion resist are presented. These results illustrate the capability of the ASML TWINSCAN XT:1900i / Sokudo RF3i litho cluster of printing 38 nm L/S in a single exposure .
This study reports on post develop defect on TC-less immersion resist system. There are major defects on TC-less resist system, for example micro-Bridging, Blob and pattern collapse defect, as is well known. Among these defect, we reported Blob and pattern collapse defect could be reduced by Acid rinse involving CO 2 . However, we also reported there was the difference in the effect for each resist.In this work, we show the great effective and slight effective case for post develop defect and we discuss the cause of difference in acid rinse effect. We evaluated and confirmed the effect on each resist, pattern, exposed area location, develop process and so on. Furthermore, we made a mechanism of defect appearing based on the analysis of defect components and the measurement of resist surface condition for each develop process.Finally we show the novel approach to post develop defect reduction on TC-less immersion resist system.
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