Cadmium telluride quantum dots (CdTe QDs) were prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq 3 device which synthesized by phase segregation method. The hybrid white light-emitting devices consist of three layers deposited successively on the ITO glass substrate; the first layer was of tetra-phenyl diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5 wt% of the (CdTe) QDs for hybrid device, whereas the third layer was tris (8-hydroxyquinoline) aluminum (Alq 3). The organic light-emitting device (OLED) was considered by room temperature photoluminescence (PL) and electroluminescence (EL). Current-voltage (I-V) characteristics indicate that the output current is good compared to the few voltage (6 V) used which gives good results to generate white light. The electroluminescence (EL) spectrum of hybrid device shows a wide emission band covering the range 350-700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931): x = 0.32, y = 0.33. The correlated color temperature (CCT) was found to be about 5886 K. Fabrication of EL devices from semiconductor material (CdTe QDs) between two layers, organic polymer (TPD) and organic molecules (Alq), was effective in white light generation. The recombination processes and I-V characteristics give rise to the output current which is good compared to the few voltages used which give good results to generate light.

The physical and chemical characterize of quantum dots (QDs) extensively depend upon the optical and morphological factors such as size and shape. The zinc selenide (ZnSe) quantum dots (QDs) have been prepared by chemical method and used to fabricate quantum dot hybrid junction devices with different types of organics polymers. The optical studies illustrate that the band gap value from the photoluminescence (PL) with high intensity of these QDs is found about 3.1 eV. The electroluminescence's (EL) hybrid devices were demonstrated by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltages (5.5 V) used which gives good results to get a generation of white light. The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm. The emissions producing this white luminescence were recognized depending on the chromaticity coordinates (CIE 1931). The correlated color temperature (CCT) was found to be about 5759, 3500 and 3498 K for ITO/TPD/ZnSe, ITO/PPV/ZnSe and ITO/PEDOT/ZnSe QDs respectively. Fabrication of EL- hybrid devices from semiconductors materials (ZnSe QDs) with holes injection organic polymer (TPD, PPV and PEDOT) was effective in white light generation.

The synthesis techniques of highly luminescent CdSe/ZnS core-shell composite nanocrystals are reported. The color-conversion, incorporating the photoluminescence emission of CdSe/ZnS core-shell nanocrystals in blue λ=350 nm and green λ=520 nm on near UV-InGaN/GaN LED λ=365 nm, was studied. The generated white light resulting from color-mixing of the emitted wavelengths of  the core-shell composite and that of the near UV emission from the LED was analyzed depending upon the chromaticity coordinates. The X-ray diffraction pattern was used to study the CdSe/ZnS core-shell structure and the nanocrystal size formation. The absorption and photoluminescence spectra of the composite core-shell were investigated. The Gaussian fit was applied to the fluorescence spectrum of the CdSe/ZnS core-shell in order to determine the chromaticity coordinates of the output white light emitted on the chromaticity diagram.

Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3 device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were considered by UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were measuredby UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for CdTe QDs. The generated white light properties with acceptable efficiency using confinement effect that makes the energy gap larger, thus the direction of the light sites are toward the center of white light color. The organic light emitting device (OLED) wasconsidered by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltage (6 V) used which gives good results to get a generation of white light. The electroluminescence (EL) spectrum of hybrid deviceshows a wide emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931) was found (x=0.32, y=0.33). The correlated color temperature (CCT) was found to be about 5886 K. Fabrication of EL-devices from semiconductors material (CdTe QDs) between two layers organic polymer (TPD) and organic molecules (Alq3) were effective in white light generation. The recombination processes and I-V characteristics gives rises to the output current is good compared to the few voltages used which gives good results to become a generation of light.

Quantum dots of CdSe, CdS and ZnS QDs were prepared by chemical reaction and used to fabricate organic quantum dot hybrid junction device. QD-LEDs were fabricated using ITO/TPD: PMMA/CdSe/Al, ITO/TPD: PMMA/CdS/Al and ITO/TPD: PMMA/ZnS/Al QDs devices which synthesized by phase segregation method. The hybrid white light emitting devices consists, of two-layers deposited successively on the ITO glass substrate; the first layer was of N, N’-bis (3-methylphenyl)-N, N’-bis (phenyl) benzidine (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers in ratio 1:1, while the second layer was 0.5wt% from each type of the (CdSe, CdS and ZnS) QDs for each device.The optical properties of QDs were characterized by UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.38, 2.69 and 3.64 eV for CdSe, CdS and ZnS respectively. The generated white light properties with acceptable efficiency using confinement effect that makes the energy gap larger, thus the direction of the light sites are toward the centre of white light color.The hybrid junction devices (EL devices) were characterized by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltages ( 8-11.5 V) used which gives acceptable results to get a generation of white light. The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931). The correlated color temperature (CCT) was found to be about 5500, 4885 and 3400K respectively. Fabrication of EL-devices from semiconductors material (CdSe, CdS and ZnS QDs) with hole injection organic polymer (TPD) was effective in white light generation. The recombination processes and I-V characteristics gives rises to the output current is good compared to the few voltages used which gives acceptable results to get a generation of white light.