The
full-Heusler (FH) inclusions in the half-Heusler (HH) matrix
is a well-studied approach to reduce the lattice thermal conductivity
of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in
situ formation of FH and/or HH alloys with interstitial Ni defects.
The excess Ni develops intermediate electronic states in the band
gap of ZrNiSn and also generates defects to scatter phonons, thus
providing additional control to tailor electronic and phonon transport
properties synergistically. In this work, we present the implication
of isoelectronic Ge-doping and excess Ni on the thermoelectric transport
of ZrNiSn. The synthesized ZrNi1.04Sn1–x
Ge
x
(x = 0–0.04) samples were prepared by arc-melting and spark
plasma sintering, and were extensively probed for microstructural
analysis. The in situ evolution of minor secondary phases, i.e., FH,
Ni–Sn, and Sn–Zr, primarily observed post sintering
resulted in simultaneous optimization of the electrical power factor
and lattice thermal conductivity. A ZT of ∼1.06
at ∼873 K was attained, which is among the highest for Hf-free
ZrNiSn-based HH alloys. Additionally, ab initio calculations based
on density functional theory (DFT) were performed to provide comparative
insights into experimentally measured properties and understand underlying
physics. Further, mechanical properties were experimentally extracted
to determine the usability of synthesized alloys for device fabrication.
Band engineering is a promising approach that proved successful in enhancing the thermoelectric performance of several families of thermoelectric materials. Here, we show how this mechanism can be induced in the p-type TiCoSbhalf-Heusler (HH) compound to effectively improve the Seebeck coefficient. Both the Pisarenko plot and electronic band structure calculations demonstrate that this enhancement is due to increased density-of-states effective mass resulting from the convergence of two valence band maxima. Our calculations evidence that the valence band maximum of TiCoSb lying at the Γ point exhibits a small energy difference of 51 meV with respect to the valence band edge at the L point. Experimentally, this energy offset can be tuned by both Fe and Sn substitutions on the Co and Sb site, respectively. A Sn doping level as low as x = 0.03 is sufficient to drive more than ∼100% increase in the power factor at room temperature. Further, defects at various length scales, that include point defects, edge dislocations, and nanosized grains evidenced by electron microscopy (field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM)), result in enhanced phonon scattering which substantially reduces the lattice thermal conductivity to ∼4.2 W m −1 K −1 at 873 K. Combined with enhanced power factor, a peak ZT value of ∼0.4 was achieved at 873 K in TiCo 0.85 Fe 0.15 Sb 0.97 Sn 0.03 . In addition, the microhardness and fracture toughness were found to be enhanced for all of the synthesized samples, falling in the range of 8.3−8.6 GPa and 1.8−2 MPa•m −1/2 , respectively. Our results highlight how the combination of band convergence and microstructure engineering in the HH alloy TiCoSb is effective for tuning its thermoelectric performance.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.