Cu-doped Cr2O3 thin films were deposited onto glass substrate by the sol–gel dip-coating (SGDC) process using dopant values of 0, 3, 6, 9 and 12%. The Chromium (III) Nitrate Nonahydrate [Cr(NO3)3·9H2O] was used as a Cr source, whilst for the dopant, the corresponding nitrate (Cu(NO3)2) was used. The crystal structure, as well as the optical and electrical properties were examined. XRD data showed that the films with a high degree of crystallinity were rhombohedral Cr2O3 phase. The crystallite size reduces with increase in Cu doping proportion. The AFM results indicate a decrease in the surface roughness of the doped Cr2O3: Cu thin films. The UV-Vis spectra of the Cu doped-Cr2O3 films showed high transparency in the visible region. The optical band gap of Cr2O3 thin films decreases with increasing in Cu doping rate. The Nyquist plot shows that the equivalent circuit of Cu doped-Cr2O3 films is a parallel circuit RpCp. As the concentration of Cu increases, Resistance RP regresses while capacitance Cp increases.
This work presents an experimental study dedicated to the synthesis and characterization of pure and Ni-doped chromium (III) oxide thin films. Sol–gel thin films with doping rates of 3%, 6%, 9%, and 12% were deposited onto glass substrates by the dip-coating method at room temperature using Cr(NO3)3: 9H2O as precursor. Using X-ray diffraction (XRD), infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis), and impedance spectroscopy on solids, we noted that the films are polycrystalline with a grain size ranging from 11.2[Formula: see text]nm to 24.4[Formula: see text]nm, the synthesized materials are highly transparent in the visible light with more than 90% of transmittance and have an optical bandgap less than 3.0[Formula: see text]eV overall, and the equivalent circuit of the deposited films is a resistors and capacitors (RC) parallel circuit.
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