We studied the effect of Zn2+ source concentration on the structural and optical properties of hydrothermally grown ZnO nanorods. The nanorods were grown on ZnO/p-Si(111) substrate using by a hydrothermal process in various concentrations of reagent at a low temperature (approximately 95 degrees C) and the structural and optical characteristics of ZnO nanorods were subsequently investigated by X-ray diffraction, field-emission scanning electron microscopy, and room temperature photoluminescence. The results demonstrate that the morphology and crystallinity of ZnO nanorods are influenced by the overall concentration of the precursor. The density and diameter of ZnO nanorods with a hexagonal structure are especially sensitivite to concentration of reactants. Furthermore, the structural transition is shown by increasing concentration. At the lowest concentration of Zn2+, the ZnO nanorods grow as single crystals with a low density and variable orientations. On the contrary, at the highest concentration, the nanorods grow as polycrystas due to the supersaturated Zn2+ source.
We successfully fabricated lateral Schottky diodes with a thin MgZnO layer inserted between the ZnO and Schottky contact metal layers. The MgZnO/ZnO heterostructure was deposited onto a c-sapphire substrate by pulsed laser deposition using Mg0.3Zn0.7O and ZnO targets. Ti/Au was used to achieve ohmic contact with the Mg0.3Zn0.7O thin film layer, whereas Schottky contacts were prepared using silver (Ag), gold (Au), and palladium (Pd). The Ag Schottky diode devices exhibited rectification ratios as high as ∼103 at a bias voltage of ±1 V, with an ideality factor of 2.37 and a work function of 0.73 eV. The possibility of preparing Schottky contacts with a high carrier concentration on the ZnO layer is discussed as a function of the presence or absence of a MgZnO thin layer and in terms of the measured current–voltage properties.
We investigated the effect of ZnO buffer layer thickness on the growth of hydrothermally grown ZnO nanorods. A series of ZnO buffer layers with different thicknesses was deposited on a p-Si (111) substrate using a co-sputtering system. After annealing the ZnO buffer layer, ZnO nanorods grown were grown hydrothermally at 95 degrees C. Unlike ZnO nanorods grown on as-deposited ZnO buffer layer, the diameter and length of ZnO nanorods grown on annealed ZnO buffer layers can be controlled. The structural and optical properties of ZnO nanorods grown on annealed ZnO buffer layers were analyzed by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence. The influence of ZnO buffer layer thickness on ZnO nanorods growth is discussed.
We investigated the effects of surface pattern size and shape on the characteristics of hydrothermally grown ZnO nanorods. For this purpose, the structural characteristics of ZnO nanorods were examined using X-ray diffraction and scanning electron microscopy. The sputtered ZnO seed layer was patterned using photolithography techniques on a Si substrate. ZnO nanorods with a [0001] texturing structure were successfully grown on selective areas by hydrothermal processes. In our experiments, however, it was observed that the diameter and the texture of the ZnO nanorods were strongly influenced by the size of the surface pattern.
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