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A comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder Interdiffusion of lateral composition modulated (GaP)2/(InP)2 shortperiod superlattices with different encapsulants

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Optical properties and interface energetics between semiconductor and electrolyte determine sensitively the efficiency of a photoelectrode for solar water splitting. By careful design of the involved interfaces and photon management, a record 15.8% power‐saved efficiency single junction InP‐based photoelectrode for photoelectrochemical water reduction can be obtained, as shown on page 679 by L. Gao, E. P. A. M. Bakkers, E. J. M. Hensen, and co‐workers.

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Nanocrystalline ZnS:Pb2+ is synthesized via a precipitation method. The luminescence is studied and the influence of the size of the nanocrystals on the luminescence properties is investigated. Nanocrystalline ZnS:Pb2+ shows a white emission under UV excitation. At least two luminescence centers are involved. One center is identified as a Pb2+ ion located on a regular Zn2+ site and gives a red emission under 480 nm excitation. The luminescence properties of this emission are characteristic for transitions on Pb2+ ions. The other centers are not as well defined and give a broad green emission band under 380 nm excitation and also show luminescence properties typically observed for Pb2+. The green emission probably originates from a charge-transfer like D-band emission of Pb2+ in ZnS close to a defect (e.g. an S2− vacancy or an O2− ion on an S2− site). A relation between the temperature quenching of the emissions and the band gap is observed and indicates that photoionization occurs.