The multipactor phenomenon is characterized by a very fast growth of the electronic population in Radio-Frequency (RF) devices under vacuum. As this effect limits the transmissible RF power and can harm RF systems, it has been widely studied during the last decades. Due to the high cost of experimental tests, simulation tools are heavily used to predict the threshold of multipactor growth. However, their reliability is limited for complex configurations, e.g. when dielectrics or magnetic fields are present. A crucial element of these multipactor simulations is the secondary-emission model. Dionne's model is able to model both metals and dielectrics secondary emission but is one-dimension only. As the three-dimensional aspect is essential for complex configurations, the Dionne model is extended do three-dimensions. Measurements of the total electron emission yield have been carried out at the ONERA and shows a good agreement for low-impact energy and low-impact angle electrons, which is relevant in multipactor simulations.
The multipactor effect is characterized by a very fast growth of the electronic population in vacuum Radio-Frequency (RF) devices. As it limits the transmitted RF power and can severely damage RF systems, multipactor has been subject to an extensive research for the past decades. Simulation tools are relatively accurate for the simplest cases, but less reliable for advanced problems: presence of an external magnetic field, complex geometry, time or temperature-dependent materials properties, etc. A code simulating the multipactor within an infinite parallelplate waveguide with a dielectric coating on the bottom plate has been developed. The inclusion of a realistic energy distribution for the secondary electrons and a new emission model shows a strong dependence of the multipactor threshold on the metal work function and on the dielectric electric charge.
Characterized by a very fast growth of the electron population in vacuum of Radio-Frequency (RF) devices, the multipactor effect has been widely studied during the past decades. As it limits the transmitted RF power and may degrade RF devices, its understanding is primordial. Multipactor simulation tools give accurate results in the simplest cases, but are less accurate for advanced configurations: complex geometries, dielectric materials, presence of magnetic fields, etc. In such cases, an accurate modelling of the electron emission phenomena becomes essential. We extended a one-dimension electron emission (EE) model to three dimensions. The obtained model is compared to measured electron emission yields. The impact of this new model on the simulated multipactor threshold of parallel plane wave-guide is also investigated.
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