Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO 3 ), having a single electron in a 3d orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO 3 thin films, where the metal-oxide sublattice is corner connected. Using x-ray absorption and x-ray linear dichroism at the V L 2,3 and O K edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the t 2g and e g manifolds. Data show a remarkable 2p−3d hybridization, as well as a strain-induced reordering of the V 3d (t 2g , e g ) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid π * and σ * orbitals and the carrier population at the metal ions, challenging a rigid band picture.
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