International audienceSilicon nanostructures are synthesized with a DC atmospheric pressure microplasma jet using an Ar/SiH4/H-2 gas mixture. The plasma is characterized by OES and imaged using an EMCCD camera. The effect of hydrogen admixture to the formed structures is studied by transmission electron microscopy. Under specific conditions, crystalline silicon nanoparticles grow in an amorphous matrix investigated by electron energy loss spectroscopy. As-grown silicon nanoparticles are collected in ethanol for dynamic light scattering and photoluminescence measurements. The size distribution peaks at 4nm. The silicon nanocrystals exhibit roomtemperature photoluminescence that peaks at approximate to 415 and approximate to 465 nm

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Al 2 O 3 thin films have been deposited at substrate temperatures between 500• C to 600• C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR).The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.9 dpa for a substrate temperature of 500 • C. This threshold shifts to 0.6 dpa for films grown at 550 • C.

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