According to the International Technology Roadmap for Semiconductors (ITRS) roadmap [1], the MOSFET sizes shrinking conventionally down to the nanometer regime. We are facing with short channel effects (SCEs) [2, 3] like poor sub-threshold swing, high drain-induced-barrier-lowering (DIBL), increased leakage currents, etc., leading to sub-optimal performance of transistors [4,5]. Researchers have studied several architectures and techniques like junctionless devices [6], multi-gate architecture [7], hetero-high-κ gate oxides [8], lower doping concentrations, high mobility substrate materials that allow lower device size, but without the disadvantage of severe SCEs [9, 10]. Saini et al. showed that among all other multi-gate architectures, triple gate junctionless devices exhibit superior gate controllability [11-14].Recently, gate-all-around nanowire has become a promising architecture for scaling of MOSFETs [15,16].In this paper, we compare two junctionless multi-gate (JLMG) architectures: junctionless gate-all-around (JL-GAA) and junctionless triple gate (JLTG) each with different high-κ gate oxides to further improve the gate control. These devices derive the advantage of high mobility of Silicon-Germanium material (1538 cm 2 /V • s at 6 × 10 17 cm −3 doping) [17]. Section 2 explains the structure and simulation of these devices. Section 3 comprises extensive comparison between the devices basis electrostatic, analog and RF parameters. Conclusions are summarized in Sect. 4.
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