In this paper, we report on high-performance piezoelectric-on-silica micromechanical resonators for integrated timing applications. Fused silica is used as the resonator structural material for its excellent material properties, and thin film aluminum nitride is used as the piezoelectric transduction layer. A silica resonator is demonstrated with a high quality factor (Q U ~25,841), low motional impedance (R m ~350 ȍ), and good power handling capability. The measured fuQ product of this resonator is the highest amongst reported micromachined silica/fused quartz resonators.
In this paper, we report on tem operation of silica MEMS oscillators on an silica platform.Temperature servo-contro implemented using an on-chip RTD-based temp and a resistive heater. A wide-range linear an has been implemented to reduce the effective TC silica resonator by an order of magnitude. Dig method is used to mitigate offset errors cause temperature sensing. By effectively removing th the frequency drift of an oscillator u micromechanical resonator is reduced to less tha 105 °C of external temperature change. consumption to ovenize the entire platform con resonators is lower than 15.8 mW.
In this paper, we report on a low phase-noise 4.9 MHz oscillator using a fused silica micro-mechanical resonator. The resonator is implemented using a piezoelectric -on-silica structure, achieving high quality factor (Q ~15,860) and low motional impedance (R m ~360 Ω). By interfacing the resonator to a CMOS amplifier, an oscillator phase noise of -138 dBc/Hz at 1 kHz,-154 dBc/Hz at 10 kHz, and -155 dBc/Hz at far-from-carrier offset frequencies has been achieved at a low-supply voltage. Vibration tests on the oscillator indicate an acceleration sensitivity of less than 4 ppb/g. The frequency tuning properties of the silica oscillator are also characterized for compensating frequency variations due to environmental effects.
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