Researchers from multiple disciplines have studied the simulation of actions through motor imagery, action observation, or their combination. Procedures used in these studies vary considerably between research groups, and no standardized approach to reporting experimental protocols has been proposed. This has led to under-reporting of critical details, impairing the assessment, replication, synthesis, and potential clinical translation of effects. We provide an overview of issues related to the reporting of information in action simulation studies, and discuss the benefits of standardized reporting. We propose a series of checklists that identify key details of research protocols to include when reporting action simulation studies. Each checklist comprises A) essential methodological details, B) essential details that are relevant to a specific mode of action simulation, and C) further points that may be useful on a case-by-case basis. We anticipate that the use of these guidelines will improve the understanding, reproduction, and synthesis of studies using action simulation, and enhance the translation of research using motor imagery and action observation to applied and clinical settings.
The Polar beamline will make use of the small emittance of the new APS-U storage ring and will offer extremely brilliant and coherent beam of variable polarization in the hard x-ray range. Tailored optics and experimental equipment will enable high spatial resolution dichroic spectroscopy, reflectivity and diffraction in combination with extreme pressures, low temperatures and high magnetic fields. Dichroic direct and ptychographic imaging of magnetic structures is being developed and will make use of the largely enhanced coherence of the low emittance source. We present an overview of the planned instrumentation and the upcoming new exciting possibilities.
Despite the many superior attributes of diamond, electronic device performance to date has fallen well behind theoretical expectation. The potential realization of highly efficient electronic polycrystalline diamond devices has been more than limited by certain technological challenges such as maintaining efficient/shallow n-type doping without higher density of defects or incorporation of sp2 bonded carbon as a result of doping(during ion implantation process). Specific n-type diamond reports demonstrating phosphorus doping (with activation energy reported in the range of 485 meV to 600 meV in (100) oriented systems have been particularly problematic as a lower solubility is found as compared to (111) oriented synthesis efforts, in addition to the reported self-compensating nature. Amongst the previous reports of Phosphorus-doped diamond nearly all experimental reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping where dislocations have been observed to be incorporated into the bulk volume during growth. These dislocations, which are known carrier scattering sites, subsequently lower mobility rendering poor conductance and high resistivity. Due to this well-known sensitivity of phosphorus incorporation to the crystal quality, typically lower in polycrystalline than homoepitaxial films, polycrystalline-based experimental reports have been largely absent. With respect to Phosphorus in-situ doping based efforts, rendered films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic, and with respect to ion beam doping efforts, complete graphitic flaking at even moderate doses (i.e. greater than 3x10 17 cm -3 ). Motivated by these shortcomings and the success of recent experimentation, we present the methodology and data from our recent successful fabrication of polycrystalline diamond P + -i-N junction (diode) with high crystal quality, high power handling capability, high current density, low threshold voltage, and ohmic contact, under room temperature operation, previously undemonstrated across all diamond material types. The superior electrical performance of the device was obtained by novel ion beam methodology designed to resolve previously unaddressed issues relating to n-type doping of diamond materials. A high current density of approximately 10 4 A/cm 2 is attained at 20V forward bias.
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