Ferroelectric (FE) HfO 2 -based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization−voltage (P−V) loops along the voltage axis due to the development of an internal electric bias, which can lead to the failure of the writing and retention functions. Here, to gain insight into the mechanism of the imprint effect in La-doped HfO 2 (La:HfO 2 ) capacitors, we combine the pulse switching technique with high-resolution domain imaging by means of piezoresponse force microscopy. This approach allows us to establish a correlation between the macroscopic switching characteristics and domain time−voltage-dependent behavior. It has been shown that the La:HfO 2 capacitors exhibit a much more pronounced imprint compared to Pb(Zr,Ti)O 3 -based FE capacitors. Also, in addition to conventional imprint, which evolves with time in the poled capacitors, an easily changeable imprint, termed as "fluid imprint", with a strong dependence on the switching prehistory and measurement conditions, has been observed. Visualization of the domain structure reveals a specific signature of fluid imprintcontinuous switching of polarization in the same direction as the previously applied field that continues a long time after the field was turned off. This effect, termed as "inertial switching", is attributed to charge injection and subsequent trapping at defect sites at the film−electrode interface.

One of the general features of ferroelectric systems is a complex nature of polarization reversal, which involves domain nucleation and motion of domain walls. Here, time‐resolved nanoscale domain imaging is applied in conjunction with the integral switching current measurements to investigate the mechanism of polarization reversal in yttrium‐doped HfO2 (Y:HfO2)—currently one of the most actively studied ferroelectric systems. More specifically, the effect of film microstructure on the nucleation process is investigated by performing a comparative study of the polarization switching behavior in the epitaxial and polycrystalline Y:HfO2 thin film capacitors. It is found that although the epitaxial Y:HfO2 capacitors tend to switch slower than their polycrystalline counterparts, they exhibit a significantly higher nucleation density and rate, suggesting that this is a rate‐limiting mechanism. In addition, it is observed that under the external fields approaching the activation field value, the switching kinetics can be described equally well by the nucleation limited switching and the Kolmogorov‐Avrami‐Ishibashi models for both types of capacitors. This signifies convergence of two different mechanisms implying that the polarization reversal proceeds via a homogeneous nucleation process unaffected by the film microstructure, which can be considered as approaching the intrinsic switching limit.

[Fe(Htrz)2(trz)](BF4) (Fe-triazole) spin crossover molecules show thermal, electrical, and optical switching between high spin (HS) and low spin (LS) states, making them promising candidates for molecular spintronics. The LS and HS transitions originate from the electronic configurations of Fe(II) and are considered to be diamagnetic and paramagnetic, respectively. The Fe(II) LS state has six paired electrons in the ground states with no interaction with the magnetic field and a diamagnetic behavior is usually observed. While the bulk magnetic properties of Fe-triazole compounds are widely studied by standard magnetometry techniques, their magnetic properties at the individual level are missing. Here we use nitrogen vacancy (NV) based magnetometry to study the magnetic properties of the Fe-triazole LS state of nanoparticle clusters and individual nanorods of size varying from 20 to 1000 nm. Scanning electron microscopy (SEM) and Raman spectroscopy are performed to determine the size of the nanoparticles/nanorods and to confirm their respective spin states. The magnetic field patterns produced by the nanoparticles/nanorods are imaged by NV magnetic microscopy as a function of applied magnetic field (up to 350 mT) and correlated with SEM and Raman. We found that in most of the nanorods the LS state is slightly paramagnetic, possibly originating from the surface oxidation and/or the greater Fe(III) presence along the nanorods’ edges. NV measurements on the Fe-triazole LS state nanoparticle clusters revealed both diamagnetic and paramagnetic behavior. Our results highlight the potential of NV quantum sensors to study the magnetic properties of spin crossover molecules and molecular magnets.

We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy.

Correction for ‘Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3via scanning diamond magnetic probe microscopy’ by Adam Erickson et al., RSC Adv., 2023, 13, 178–185, https://doi.org/10.1039/D2RA06440E