A solution-based inductively coupled plasma optical emission spectrometric (ICP-OES) method is described for elemental analysis with relative expanded uncertainties on the order of 0.1% relative. The single-element determinations of 64 different elements are presented, with aggregate performance results for the method and parameters for the determination of each element. The performance observed is superior to that previously reported for ICP-OES, resulting from a suite of technical strategies that exploit the strengths of contemporary spectrometers, address measurement and sample handling noise sources, and permit rugged operation with small uncertainty. Taken together, these strategies constitute high-performance ICP-OES.
Artifacts are the nemesis of trace element analysis in electron-excited energy dispersive X-ray spectrometry. Peaks that result from nonideal behavior in the detector or sample can fool even an experienced microanalyst into believing that they have trace amounts of an element that is not present. Many artifacts, such as the Si escape peak, absorption edges, and coincidence peaks, can be traced to the detector. Others, such as secondary fluorescence peaks and scatter peaks, can be traced to the sample. We have identified a new sample-dependent artifact that we attribute to Compton scattering of energetic X-rays generated in a small feature and subsequently scattered from a low atomic number matrix. It seems likely that this artifact has not previously been reported because it only occurs under specific conditions and represents a relatively small signal. However, with the advent of silicon drift detectors and their utility for trace element analysis, we anticipate that more people will observe it and possibly misidentify it. Though small, the artifact is not inconsequential. Under some conditions, it is possible to mistakenly identify the Compton scatter artifact as approximately 1% of an element that is not present.
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