La mécatronique est une discipline qui combine entre la mécanique, l'électronique et l'informatique. L'apparition des systèmes mécatronique donne naissance à des phénomènes de défaillance et de dégradation qui se développe avec le temps et qui ne sont pas bien maitrisées. Pour étudier ces défaillances on va utiliser la méthode des éléments finis, est un schéma (méthode) numérique qui permet de simuler (résoudre) via l'outil informatique des problèmes de la physique compliqués. Et ce, en approximant le modèle mathématique basé sur une équation aux dérivées partielles dont le nombre d'inconnus est infini par un modèle algébrique matriciel dont le nombre d'inconnus est fini. La mise en application de cette méthode ce fait avec deux logiciels COMSOL et ANSYS, et les simulations vont nous permettre d'observer le comportement de notre composant ainsi détecter l'origine des défaillances. ABSTRACT. Mechatronics is a discipline that combines mechanics, electronics and computer science. The appearance of mechatronic systems gives rise to failure and degradation phenomena that develop over time and are not well controlled. To study these failures we will use the finite element method, is a numerical scheme (method) that allows to simulate (solve) complicated physics problems via the computer tool. This is made by approximating the mathematical model based on a partial differential equation whose number of unknowns is infinite with a matrix algebraic model whose number of unknowns is finite. The implementation of this method is made with two software programs COMSOL and ANSYS, and the simulations will allow us to observe the behavior of our component and detect the origin of the failures. MOTS-CLÉS. Modélisation thermique, système mécatronique, transistor HEMT, performance, température, puissance dissipée.
The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.
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