BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10 19 -10 20 cm -3 . Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm 2 /Vs. The absorption coefficient is > 10 5 cm -1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.

Tackling the complex challenge of harvesting solar energy to generate energy-dense fuels such as hydrogen requires the design of photocatalytic nanoarchitectures interfacing components that synergistically mediate a closely interlinked sequence of light-harvesting, charge separation, charge/mass transport, and catalytic processes. The design of such architectures requires careful consideration of both thermodynamic offsets and interfacial charge-transfer kinetics to ensure long-lived charge carriers that can be delivered at low overpotentials to the appropriate catalytic sites while mitigating parasitic reactions such as photocorrosion. Here we detail the theory-guided design and synthesis of nanowire/quantum dot heterostructures with interfacial electronic structure specifically tailored to promote light-induced charge separation and photocatalytic proton reduction. Topochemical synthesis yields a metastable β-Sn 0.23 V 2 O 5 compound exhibiting Sn 5s-derived midgap states ideally positioned to extract photogenerated holes from interfaced CdSe quantum dots. The existence of these midgap states near the upper edge of the valence band (VB) has been confirmed, and β-Sn 0.23 V 2 O 5 /CdSe heterostructures have been shown to exhibit a 0 eV midgap state-VB offset, which underpins ultrafast subpicosecond hole transfer. The β-Sn 0.23 V 2 O 5 /CdSe heterostructures are further shown to be viable photocatalytic architectures capable of efficacious hydrogen evolution. The results of this study underscore the criticality of precisely tailoring the electronic structure of semiconductor components to effect rapid charge separation necessary for photocatalysis.

Semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb0.33V2O5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb0.33V2O5 heterostructures prepared by the same methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb0.33V2O5 heterostructures relative to CdSe/β-Pb0.33V2O5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb0.33V2O5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb0.33V2O5 NWs, along with electron transfer into the conduction band of the β-Pb0.33V2O5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 530 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.

BaZrS 3 , a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, nontoxicity with earth-abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7–1.8 eV is larger than the optimal value required to reach the Shockley–Queisser limit of a single-junction solar cell. Here, we report the synthesis of Ba(Zr 1– x Ti x )S 3 perovskite compounds with a reduced band gap. It is found that Ti-alloying is extremely effective in band gap reduction of BaZrS 3 : a mere 4 atom % alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.

Conspectus The development of efficient solar energy conversion to augment other renewable energy approaches is one of the grand challenges of our time. Water splitting, or the disproportionation of H2O into energy-dense fuels, H2 and O2, is undoubtedly a promising strategy. Solar water splitting involves the concerted transfer of four electrons and four protons, which requires the synergistic operation of solar light harvesting, charge separation, mass and charge transport, and redox catalysis processes. It is unlikely that individual materials can mediate the entire sequence of charge and mass transport as well as energy conversion processes necessary for photocatalytic water splitting. An alternative approach, emulating the functioning of photosynthetic systems, involves the utilization of hybrid systems wherein different components perform the various functions required for solar water splitting. The design of such hybrid systems requires the multiple components to operate in lockstep with optimal thermodynamic driving forces and interfacial charge transfer kinetics. This Account describes a new class of nanoscale heterostructures comprising M x V2O5 nanowires, where M is a p-block cation with a (n – 1)d 10 ns 2 np 0 electronic configuration characterized by a stereoactive lone pair of electrons and x is its stoichiometry, interfaced with II–VI semiconductor quantum dots (QDs). Photocatalytic water splitting involves the transfer of excited-state holes from QDs to mid-gap states (derived from the stereoactive lone pairs of p-block cations) of nanowires, hole transport through nanowires, the reduction of protons at a QD-immobilized catalyst, and water oxidation at an anode. The M x V2O5/QD architectures provide a vast design space for evolutionary optimization of function with considerable tunability of composition and structure of the individual components as well as of the interfacial structure, thereby facilitating programmability of absorption spectra, energetic offsets, and charge-transfer reactivity. The available design space spans choice of the p-block cation M, its stoichiometry x, the composition and size of various QDs, and the nature of the nanowire/QD interface. This multivariate parameter space has been navigated by integrating first-principles modeling, diversified synthesis, spectroscopic measurements, and catalytic evaluation to facilitate the rational design of several generations of heterostructures and the systematic improvement of their photocatalytic performance. The electronic structures of the target heterostructures are predicted by DFT calculations in light of the revised lone pair model of stereoactive structural distortions and evaluated by hard X-ray photoelectron spectroscopy such as to systematically tune the interfacial band offsets. Central to this approach is the development of a topochemical “etch-a-sketch” intercalation approach that allows for facile installation of p-block cations in metastable polymorphs of V2O5. The interfacial charge transfer kinetics of M x V2O5/QD het...