Effect of oxygen on the characteristics of radio frequency planar magnetron sputtering plasma used for aluminum oxide deposition Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films Cadmium telluride oxide films (CdTe:O) were grown by a radio frequency sputtering technique using a controlled plasma (Ar-N 2 0) on glass slide substrates. The films were studied by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction. We demonstrate that with N 2 0 the oxidation process occurs in a narrow range of partial pressures of nitrous oxide. We find that the films are amorphous and the amount of oxygen incorporated in the films depends on the N ° partial pressure and saturates at about 55 at. % oxygen. As the amount of oxygen increases the 2 • number of Te-O and Cd-O bonds increases. The compounds formed depend on the partIal pressure of the N 2 0 and are of the form Cd x TeyO z ' When saturation of oxygen is obtained the compound formed is probably CdTe20s.

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Amorphous CdTe oxide (a-CdTe:O) thin films with different concentrations of oxygen were grown by rf sputtering and analyzed by Auger electron spectroscopy. A slight change of shape in the Cd MNN peak as a function of oxygen content in a-CdTe:O is observed. This peak resembles the Cd MNN peak of CdTe, at one extreme, and that of CdTeO3, at the other. The Te MNN and the O KLL peaks have similar shapes and lower intensities for a-CdTe:O oxygen saturated films than those in CdTeO3. On the other hand, there is a large and gradual difference in shape, intensity, and energy observed in the Te MNN peak among a-CdTe:O with low, intermediate, and high concentration of oxygen. Different Te oxidation states, as Te−2 and Te+4, contribute to this change as evidenced by a simulation with combinations of CdTe and of CdTeO3 spectra, or by combinations of a-CdTe:O spectra with low and high oxygen content.

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Very heavily doped n-type polycrystalline CdTe films doped with metallic cadmium were prepared by using close-spaced vapor transport technique combined with free evaporation and the electrical, structural, and morphological properties were investigated. Cadmium was introduced as a dopant by evaporation during films preparation. The highest dark conductivity at room temperature of the films obtained was 1.18×104 S cm−1. The dark conductivity decreased with the increase of the ambient temperature. The highest dark electron concentration obtained was 1.59×1022 cm−3 and increased with the temperature. The mobility decreased with the temperature. The film was a polycrystalline cubic phase. We show the surface topography of the film using scanning electron microscope and scanning tunneling microscopy techniques, in order to see the growth patterns. The crystallite size was very uniform of a few μm, and the growth patterns on the grain surface were in form of terraces.

In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0 ≤ x ≤ 1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation.

PACS 68.55.Jk, 78.66.Hf CdS thin films were obtained by chemical bath deposition onto corning glass slides using precursor solutions previously treated in a steady magnetic field. The kinetic growth was affected in dependence of the magnetic field intensity used in the solution treatments. The growth rate is slower when magnetized solutions are used; however, the reaction exhaustion is more delayed. The magnetic treatments improve the conversion of starting materials in thin films. Thus, the bath is more efficient and thicker films can be obtained.