Thin crystalline ErS films have been grown by flash evaporation in vacuum using a pre-synthesized bulk material on quartz and sapphire substrate. The bulk material was synthesized by direct synthesis in sealed quartz ampoules at a temperature of 800 K. During the film growth process, the vacuum in the deposition chamber was maintained at 6 10 Pa, evaporator temperature was 2750 K and the substrate temperature 900 K. Film thickness was about 0.4-0.6 µm. All prepared films had a stoichiometric composition and a NaCl crystal lattice with a lattice parameter a = 5.48 Å. After deposition of films and cooling to room temperature the dependence of electrical resistivity on time was investigated by the four-probe method at atmospheric pressure. It is shown that the relaxation process on films deposited on a quartz substrate proceeds much more slowly than on films prepared on a sapphire substrate. A possible mechanism for such a difference is given.
Rare earth chalcogenides possess interesting electrophysical, magnetic, optical, thermal, mechanical, etc. properties. Work aims to develop the terbium monotelluride TbTe nanofilms deposition technology on various substrates and study some of their electrophysical and mechanical properties. 0.2 -0.8 µm thick films are prepared by vacuum-thermal evaporation
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