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In this study, we demonstrate the thermal-stable characteristics of a metamorphic double -doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and À2:5% from 300 to 420 K. When the temperature increases from 360 to 380 K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In 0:6 Ga 0:6 As region of the In 0:5 Ga 0:5 As/ þ /In 0:5 Ga 0:5 As/In 0:6 Ga 0:4 As/In 0:5 Ga 0:5 As/ þ /In 0:5 Ga 0:5 As channel when temperature increases.

621.039:62-52 and V. P. Semishkin We generalize the software implementation experience for a SAKOR-M system of automated monitoring of the residual service life operating as a component of the systems of diagnostics of residual service life. The SAKOR-320 system introduced at the second power-generating block of the Rostovskaya nuclear power plant additionally includes the surface resistance thermometers, solves the inverse problem, takes into account the actual displacements of steam generators, computes the degree of fatigue growth of the defects, and evaluates the ultimate states according to the criteria of leak prior to failure.