A system for plasma assisted oxidation of Si at temperatures below 800°C is described. Oxides grown in this system have an unusual thickness versus time relationship. The first 110 nm of oxide exhibit a t 1 1 2 dependence. Any additional growth shows a t 1 13 dependence. Pressure, oxygen concentration, and rf power are all important parameters in determining the growth rate and uniformity of the oxide layers. Breakdown measurements on these oxide layers show that post oxidation annealing is necessary if these oxides are to compete with thermal oxides. The type of annealing is very important in determining the breakdown voltage. The results of various annealing procedures are described. The effects of heating the wafers independent of the heat generated by the plasma, and the frequency dependence of the growth are discussed.
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