SiC is among the most promising materials for next generation power electronic devices due to its superior physical properties to Si and relative mature technology. SiC MOSFET is expected to offer performance improvement over Si counterpart. This paper presents the characterization of 1.2 kV SiC MOSFET, including its static and dynamic characteristics, and its high-frequency (1 MHz), high-power (1.2 kW) zerovoltage switching (ZVS) operation in a half-bridge parallel resonant converter. In comparison with SiC JFET and Si CoolMOS, the advantages and disadvantages of the SiC MOSFET are summarized. I.
Permanent magnet motors are now practical up to thousands of horsepower. The relative advantages of disc, rotating cylinder, and cup rotor geometries are dependent on shaft speed and power level. Brushless disc motors with pulse width modulated drives have been demonstrated over a range of 200 to 20,000 RPM and 10 to 700 horsepower.
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