Reverse current–temperature (IΓ/T) characteristics of Al–GaAs Schottky diodes with oxidized interfaces are measured in the temperature region of 250–400 K at various reverse bias voltage in order to elucidate a mechanism of carrier transport through the barrier. The IΓ/T dependencies are explained on the basis of phonon-assisted electrons tunneling from interface states to the semiconductor model. The barrier height, evaluated from the IΓ/T characteristics (activation energy) which depends on the applied voltage and temperature, is discussed. It is shown that these dependencies are due to the above-mentioned carrier transport through the Schottky barrier mechanism. The important of the phonon-assisted tunneling process on the current transport in the diodes is emphasized.
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