We developed the scheme of terahertz (THz) surface magnetoplasmons (SMPs) over n-type semiconductor by an electron beam in the presence of an external magnetic field. Electron beam bunching by SMPs generates perturbed current density and develops THz SMPs by resonant Cherenkov interaction. More beam energy is required for the generation of high-frequency THz SMPs in the presence of large applied magnetic field. Growth rate of Cherenkov THz SMPs grows with THz frequency and attains a maximum value and then falls off with THz frequency. It grows with temperature and decreases with the electron cyclotron frequency. Growth rate is directly proportional to beam density's cube root and inversely proportional to [Formula: see text], where [Formula: see text] is relativistic factor of incident electron beam. The proposed mechanism may develop an actively tunable device for the generation of THz SMPs due to growth rate dependence on semiconductor temperature, applied magnetic field, and electron beam energy. The beam energy of [Formula: see text]–[Formula: see text] is used for the excitation of SMPs 0.81–2.3 THz.
We investigated the excitation of terahertz (THz) surface magneto plasmons(SMPs) by nonlinear mixing of laser and its frequency shiftedsecond harmonic on a rippled surface of n-type semiconductor-free spaceinterface. Obliquely incident p-polarized lasers exert a nonlinear ponderomotiveforce on free electrons of n-type semiconductor. Nonlinearponderomotive force induce the oscillatory velocities at frequencies 2ω1and (ω1 −ω2). These oscillatory velocities beat the modulated electrondensity nq to get the charge density perturbation at (2ω1, 2k1z + q)and (ω1 − ω2, k1z − k2z + q). Perturbed charge density couples withthe linear oscillatory velocities to produce a nonlinear current density,which resonantly derives THz SMPs at frequency ω = 2ω1 − ω2 andpropagation constant kz = 2k1z − k2z + q. Here, q provides theextra wave number for the phase matching condition. The efficiencyof THz SMPs wave attained up to 9% and amplitude of THz SMPscontrolled by the electron cyclotron frequency ωce and incident angle θ.
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