The local structure of amorphous As-Se films prepared by thermal evaporation in a vacuum and by RF ion-plasma sputtering, two techniques strongly differing in the conditions of substance vaporization and condensation of atoms on a substrate, was studied by Raman spectroscopy. It was found that the local structure of the films varies. A conclusion was drawn that the differences in local structure between the films are stipulated by the fact that the matrix of the films obtained by ion sputtering contains, along with the structural units common to films deposited by the two methods, other structural units.
The atomic structure and electrical and optical properties of amorphous AsSe films prepared by thermal evaporation in a vacuum and by rf ion-plasma sputtering have been studied. The conductivity, activation energy of conductivity, optical gap, radii of the first and second coordination spheres, number of the nearest neighbours of arsenic and selenium atoms in the first coordination sphere and dimensions of the medium-range order domain in the atomic structure have been determined for the samples studied. Films prepared by different methods have dissimilar electrical and optical parameters and show differences in atomic structure, mainly related to the dimensions of the medium-range order domains. A conclusion is made that it is the medium-range order in the amorphous film atomic structure in the As-Se system that governs the electronic structure of amorphous films of the As-Se system.
The article discusses the structure and properties of noncrystalline carbon films synthesized by ion-plasma sputtering of a graphite target in an argon atmosphere at direct current. Analysis of the molecular structure of carbon films was performed using Raman spectroscopy and dependence of the structure of synthesized films on the synthesis temperature and substrate material was revealed. Besides the main G peak possesses the values in a broad frequency range from 1500 to 1575 cm À1 . The evolution of molecular structure peculiarities of synthesized carbon films depending on the synthesis conditions was clearly shown using the numerical methods of the Raman spectra decomposition. Studies of the optical spectra showed that the band gap of synthesized films varies from 0.78 to 1.67 eV and with increasing optical band gap, the value of G peak position decreases under laser excitation of 2.62 and 1.96 eV.
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