In modern integrated circuits the number of devices have strongly increased. As a result, identifying the issues which have an impact on their performance stands out as a very complicated and challenging problem. In digital integrated circuits there are methods which are known, as well as some others which are in the active development stages targeted to enable the built-in self-tests, identify, and report those issues. At that, for mixed signal circuits, where the calculations or functions are performed based on the voltage levels, it is much complicated to develop self-testing mechanisms. A novel method of identifying the lack of clock signal and its duty cycle variation is proposed in this paper. The developed architectures and solutions are capable of detecting the lack of the clock signals, as well as informing the digital parts of the systems about the requirement for the coarse or fine tunings of the clock generation systems outside their autocalibration and loops.
Memory devices are an important part of integrated circuits. If previously the storage capacity of memory devices did not exceed a few tens of kilobytes, now it reaches terabytes. Due to this, the design of memory devices has become more complicated both technically and temporally. Particularly improvement of the power consumption and aging parameters of memory devices has become difficult. One of the most important problems in modern integrated circuits is the reduction of power consumption. Approximately 80% of the total integrated circuit area is occupied by memory devices, they account for more than 60…70% of the total energy consumption. In static random-access memory devices, the sense amplifiers are the ones with the most power consumption. In the process of reading, they account for about 40% of the total power consumption. The design time is also a major issue in the memory device production. That's why memory devices are designed automatically using existing special libraries. And the elements in the memory devices are designed manually, which affects their design time and cost. This article proposes a software tool that allows to reduce the power consumption of sense amplifiers programmatically. In addition, it allows to effectively study the preselected parameters of the amplifiers.
Power reduction is one of the primary problems in modern high-speed integrated circuits. Static RAM is one of the most common type of memory. The average power consumption and speed of the SRAM device have a great impact on the performance of the whole system. In SRAM, a sense amplifier is considered to be an active element in the reading process. Besides, the moderate decrement of the average power consumption in the sense amplifier can cause a significant power reduction of the entire system, as bit lines in SRAM are connected to sense amplifiers. The existing sense amplifier of SRAM is investigated in this paper. The transistors of the selected amplifier are changed by ultra-low-voltage transistors. Also, the design of current mirrors is changed. The proposed circuit has fewer active transistors, which reduces the power consumption of the sense amplifier in the reading process. The circuit is designed with 28 nm and 14 nm (FinFET) technology and examined according to power consumption and sensitivity. As the parameters of the amplifier can vary with different technological processes, the scheme has been optimized for different technological processes (typical, fast, slow, etc.). The results of the scheme simulation at different temperatures and supply voltages are presented. A comparative analysis of the selected and proposed schemes is performed according to the average power consumption.
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