Structures with one-dimensional quantum objects in intermediate band are promising for their application in solar cells and photodetectors. We present analysis of dark current-voltage characteristics, photo-voltage decay and photo-voltage spectra for this structures in comparison with reference GaAs based structures. It has been shown that InGaAs quantum wires make a significant influence on J-V dependences and photo-voltage spectra. InGaAs QWRS are additional recombination centers and transitions between them dominated over by Shockley-Read-Hall recombination at low bias.The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to intermediate band transitions in the quantum wires.
The issues of constructing microwave diplexers are considered. The calculated ra-tios for the circuit elements are given. The possibility of transforming the circuit elements in order to achieve the necessary filter ratings for LTCC-based diplexers is shown. Diplexers in the form of LPF-PF and PF-PF are manufactured. The calculation and measurement of the input power of diplexers are carried out.
The article discusses the issues of minimizing intermodulation distortions arising in tunable bandpass filters made with the use of varicaps. It presents the analysis of the tunable filter circuits, on the basis of which we determined the circuits with minimum intermodulation distortions.
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