The Raman spectroscopy method is used to study the influence of thermal and RF plasma treatment on the structure of near-surface Si layers in Si-SiO, structures implanted with P + ions. Thermal annealing at T = 500 "C is found to bring about an insignificant increase in microcrystalline dimensions and a small change in the root mean square bond angle deviation A$. At T > 500 "C. a jump-type transition from the amorphous state to the crystalline one occurs. The treatment in the RF plasma discharge in nitrogen atmosphere when increasing power density up to 2.0 W cm-2 leads to the increase in the microcrystalline average dimensions from 35 A up to 90 A and the decrease in the value of A8. At P > 1.2 W cm-', the value of A0 = 6.8", which is very close to the minimum possible value of A8m,n = 6.6". This indicates a practically full relaxation of Si amorphous structure. A complete correlation of Raman data with changes in paramagnetic defect concentration in the amorphous structure (Do centres, g = 2.0055). established by the EPR method, was obtained.
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