We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 μs, which is much faster, compared to the band-to-band luminescence of bulk silicon.
To prove directly the relation between the emergence of narrow lines in the dislocation photo‐l uminescence spectrum of germanium after the second deformation stage and the splitting value Δ of perfect dislocations a special orientation of crystals at the second deformation stage is used. The samples contain dislocations either with Δ > Δ0 or with Δ < Δ0 (Δ0 is the equilibrium splitting value). The narrow lines are found to arise only on the short‐w ave side of the line corresponding to equilibrium splitting at Δ > Δ0 and on the long‐w ave side at Δ < Δ0. This result and the unique regularity of the narrow line arrangement observed experimentally are considered as a convincing evidence for the effect of the distance between partials on the radiation energy associated with the 90° partials only.
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