The residual resistivity, Hall effect, and magnetization of Co2YSi (Y = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys were considered at T = 4.2 K and in fields up to 100 kOe. It is shown that as the number of valence electrons z ranges from 26 to 32, significant changes in the residual resistivity ρ0, magnetization Ms, sign and magnitude of the normal R0 and anomalous RS Hall effect coefficients are observed during the transition from Co2TiSi to Co2NiSi. It is established that there is a clear correlation between the values ρ0, R0, RS and Ms, depending on the number z, which can be associated with the appearance of a half-metal ferromagnetic state and/or spin gapless semiconductor. As z changes, the anomalous Hall effect coefficient has a power-law dependence on the residual electrical resistivity with an exponent of k = 3.1, which diverges with existing theories but agrees well with the experimental data obtained earlier for similar half-metallic ferromagnetic Heusler alloys.

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WTe2 and MoTe2 single crystals were grown, and their electrical resistivity in the temperature range from 80 K to 300 K, optical properties at room temperature in the spectral range of 0.17-5.0 eV were studied as well as theoretical calculations of the electronic structure were performed. It is shown that the temperature dependence of the electrical resistivity of orthorhombic WTe2 has a metallic type with resistivity value of (0.5-1) mOhmcm, while hexagonal MoTe2 has a semiconductor one and resistivity value (0.5-1) Ohmcm, which is three orders of magnitude larger than the resistivity of WTe2. Optical properties indicated that there is no contribution from free carriers in the entire spectral range studied. The calculated densities of the electronic states of MoTe2 and WTe2 showed the presence of a bunch of the molybdenum and tungsten electronic states in a wide energy interval with strong admixing of tellurium states. In the WTe2 compound, the larger number of the electronic states is located near the Fermi energy, characterizing a more metallic state in this compound as compared to MoTe2.

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The dichalcogenide Bi2Te3 and Bi2Se3 crystals belong to the 3D topological insulator family. Doping the crystals with magnetic ions can break the time-reversal symmetry and open an energy gap at surface Dirac points. This provides the opportunity of manipulating the surface transport and observing the anomalous quantum Hall effect. We studied magnetic properties of three single-crystalline Bi2−xCrxSe3 samples with x = 0.01, 0.03, and 0.06 within a temperature range from 2 to 300 K. The dc magnetization revealed the coexistence of antiferromagnetic and ferromagnetic ordering and paramagnetism. Their significance depends on the chromium content. The ferromagnetic phase transition was suppressed by high enough magnetic field. The antiferromagnetic transition near 80 K did not shift visibly up to 50 kOe. The Curie-Weiss law approximation gave the effective magnetic moment μ eff close to 4.9 μB, which corresponds to divalent chromium ions. Metamagnetic phenomena were found for crystals with x = 0.03 and 0.06.

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