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Previous experimental work on a two-dimensional (2D) electron gas in a Sion-sapphire device led to the conclusion that both conductivity and phonon drag thermopower S g are affected to the same relative extent by weak localization. The present paper presents further experimental and theoretical results on these transport coefficients for two very low mobility 2D electron gases in δ−doped GaAs/Ga x Al 1−x As quantum wells. The experiments were carried out in the temperature range 3-7K where phonon drag dominates the thermopower and, contrary to the previous work, the changes observed in the thermopower due to weak localization were found to be an order of magnitude less than those in the conductivity. A theoretical framework for phonon drag thermopower in 2D and 3D semiconductors is presented which accounts for this insensitivity of S g to weak localization. It also provides transparent physical explanations of many previous experimental and theoretical results. PACS: 73.20 Fz, 73.40 Kp Typeset using REVT E X S is the experimental quantity which gives access to ↔ ǫ and is defined by E = ↔ S ∇T (the chemical part ∇µ/e is not observed in experimental situations, e.g. see Gurevich et al. 10 ) measured under the condition J = 0. The coefficient ↔ ǫ has two additive contributions, diffusion ↔ ǫ d and phonon drag ↔ ǫ g , which are responsible for the two corresponding components ↔ S d and ↔ S g .

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