Infiltration of molten metal into ceramic performs without external pressure is a promising fabrication method for metal-matrix composites. Thus, this research is focused on the kinetic of capillary infiltration in the processing of Si/SiC composites. The calculation of the infiltration kinetics for a liquid in a porous material is possible by applying the modified-Washburn equation which involves the effective diameter of the pores. This equation implies a K value depending on the wetting angle, the density, the viscosity and the surface tension of the liquid at a given temperature. In this study, the main aim was to measure the K Si value of molten silicon infiltration into porous SiC at 1500°C. On this way, consolidated β-SiC powder compacts were prepared for infiltration experiments. The effects of the SiC particles presintering on the pore size were examined as they can affect molten silicon infiltration. So, the monitoring of the mass increase during hexadecane rise was used to determine the effective diameter of the pores. It was evidenced that an increase of 15.5% of the initial effective diameter occurs. Consequently, a corresponding correction has to be applied to the initial effective diameter of the siliconinfiltrated compacts. Infiltrations of pure molten silicon into SiC compacts were successfully carried out at 1500°C under high vacuum (5.10 -3 mbar) and the average value of K Si was found equal to (5.8±0.4)×10 -6 cm 5 .s.g -2 . The effect of molten silicon rise on the porosity was also considered.

International audienceA SiC/SiC-Si composite can be synthesized by molten silicon infiltration in a SiC preform impregnated with a slurry of SiC powder. The kinetics of molten silicon infiltration in such a porous material are unknown, and the experimental measurement is complex. The calculation of the rise kinetics for a liquid in a porous material is possible by applying the Washburn modified equation with an accurate description of the pores. The monitoring of the mass and front height variations during hexadecane infiltration in a submicronic SiC packed powder and in a preform filled with a SiC powder was used to characterize the porosity. In the case of a fibrous preform, the residual porosity is composed of inter-grain pores and cracks formed during the drying of the slurry. The results of this study suggest that the liquid progresses first in the inter-grain porosity of the powder. The rise kinetics of molten silicon into a preform were then evaluated by calculation based on the pore description obtained from hexadecane capillary infiltration experiments

International audienceLittle information is available about the evolution of SiC in presence of molten silicon. In this context, two kinds of experiments relative to the interaction between SiC substrates and molten Si were performed between 1450 and 1600°C with: 1) dense α-SiC bars and 2) dense α-SiC pellets coated with a β-SiC layer deposited by CVD. The results obtained indicate that an important crystal growth occurs in any cases. Large and facetted SiC crystals have grown on the surface of the SiC substrates and on the whole surface of molten silicon. These crystals are formed by dissolution-growth mechanism of SiC substrates with kinetics depending on the temperature. Low thermal gradients within the samples and between the inner parts and/or the surface of the samples could noticeably promote the evolution of the system by generating a carbon flux. The interaction between molten silicon and SiC is of importance because it could have some effects on the physical and chemical properties of the materials. It is well known that large grains are deleterious for mechanical properties