This work presents simulated output characteristics of gas sensor transistors based on graphene nanoribbon (GNRFET). The device studied in this work is a new generation of gas sensing devices, which are easy to use, ultracompact, ultrasensitive, and highly selective. We will explain how the exposure to the gas changes the conductivity of graphene nanoribbon. The equations of the GNRFET gas sensor model include the Poisson equation in the weak nonlocality approximation with proposed sensing parameters. As we have developed this model as a platform for a gas detection sensor, we will analyze the current-voltage characteristics after exposure of the GNRFET nanosensor device to NH 3 gas. A sensitivity of nearly 2.7% was indicated in our sensor device after exposure of 1 ppm of NH 3 . The given results make GNRFET the right candidate for use in gas sensing/measuring appliances. Thus, we will investigate the effect of the channel length on the ON-and OFF-current.
In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool to investigate the effects of photoexcitation on Ids-Vds characteristics of the photo-CNTFET. We have present results obtained after variation of power illumination and light beam wavelength.
In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool to investigate the effects of photoexcitation on Ids-Vds characteristics of the photo-CNTFET. We have present results obtained after variation of power illumination and light beam wavelength.
In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool to investigate the effects of photoexcitation on I ds-V ds characteristics of the photo-CNTFET. We have present results obtained after variation of power illumination and light beam wavelength. 1.
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